SOT-23 Plastic-Encapsulate
MOSFETS
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
P-Channel 20-V(D-S) MOSFET
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon
FEATURE
epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
TrenchFET Power MOSFET
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
WILLAS
FM120-M
SE2301
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-23
0.071(1.8)
0.056(1.4)
Mechanical data
APPLICATIONS
•
Epoxy : UL94-V0 rated flame retardant
z
Load Switch for Portable Devices
•
Case : Molded plastic, SOD-123H
,
z
DC/DC Converter
•
Terminals :Plated terminals, solderable per MIL-STD-750
z
Pb-Free package is available
Method 2026
•
Polarity : Indicated
packing
band
RoHS product for
by cathode
code suffix ”G”
•
Mounting Position : Any
Halogen free product for packing code suffix “H”
•
Weight : Approximated 0.011 gram
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
0.031(0.8) Typ.
1. GATE
2. SOURCE
3. DRAIN
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MARKING:
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
S1
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
V
RRM
V
RMS
V
DC
I
FSM
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
Value
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Vol
Vol
Vol
Maximum Average Forward Rectified Current
Maximum ratings (T
a
=25℃
superimposed on rated load (JEDEC method)
unless
I
O
otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
V
F
I
R
S
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
Unit
Parameter
Am
Drain-Source Voltage
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Gate-Source Voltage
Operating Temperature Range
R
ΘJA
C
J
T
J
TSTG
-20
±8
-55 to +125
40
120
V
℃/W
PF
Continuous Drain
Storage Temperature Range
Current
-2.3
65
to +175
-
-10
-55 to +150
℃
Pulsed Drain Current
Maximum Forward Voltage at 1.0A DC
CHARACTERISTICS
SYMBOL
Continuous Source-Drain Diode Current
A
0.85
℃
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
I
-0.72
Thermal Resistance from Junction to Ambient(t
≤
5s)
@T A=125℃
Rated DC Blocking Voltage
Maximum Average Reverse Current at @T A=25℃
Maximum Power Dissipation
Junction Temperature
P
D
R
θ
JA
T
J
T
stg
0.50
0.70
0.35
357
150
0.5
10
W
℃/W
℃
0.9
0.92
Vol
mAm
NOTES:
Storage Temperature
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
-55 ~+150
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
