WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
P-Channel 30-V(D-S)
overvoltage protection.
•
Guardring for
MOSFET
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
FEATURE
•
Lead-free parts meet environmental standards of
TrenchFET Power MOSFET
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FM120-M
PACKAGE
SE2303
THRU
FM1200-M
Pb Free Produ
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT-23
APPLICATIONS
UL94-V0 rated flame retardant
•
Epoxy :
Load
Case : Molded plastic, SOD-123H
•
Switch for Portable Devices
DC/DC Converter
terminals, solderable per MIL-STD-750 ,
•
Terminals :Plated
Method 2026
Pb-Free package is available
•
Polarity : Indicated by cathode band
RoHS product for packing code suffix ”G”
•
Mounting Position : Any
Halogen free product for packing code suffix “H”
•
Weight : Approximated 0.011 gram
Mechanical data
1. GATE
2. SOURCE
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
3. DRAIN
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃
MARKING: S3
ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
V
RRM
V
RMS
V
DC
I
O
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum ratings (T
a
=25℃ unless otherwise noted)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
R
ΘJA
C
J
T
J
TSTG
Unit
Drain-Source Voltage
Typical Junction Capacitance (Note 1)
Operating Temperature
Gate-Source Voltage
Range
Typical Thermal Resistance (Note 2)
Parameter
Symbol
V
DS
V
GS
I
D
P
D
R
θJA
T
J
T
STG
Value
-30
±20
-1.9
0.50
0.70
0.35
-55 to +125
40
120
-
65
to +175
V
-55 to +150
A
Continuous Drain Current
Storage Temperature Range
Continuous Source-Drain Diode Current
CHARACTERISTICS
Maximum Forward Voltage at 1.0A
Maximum Power Dissipation
DC
Rated DC Blocking Voltage
Maximum Average Reverse Current at @T A=25℃
I
S
-0.83
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
V
F
0.85
0.5
10
W
℃/W
℃
0.9
0.92
I
Thermal Resistance from Junction to Ambient(t≤5s)
R
Junction Temperature
Storage Temperature
NOTES:
@T A=125℃
357
150
-50 ~+150
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC COR
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
