WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
N-Channel
optimize board space.
30-V(D-S) MOSFET
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
FEATURE
High surge capability.
•
Guardring for overvoltage protection.
TrenchFET
high-speed switching.
•
Ultra
Power MOSFET
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FM120-M
PACKAGE
SE2304
THRU
FM1200-M
Pb Free Produ
Features
Package outline
SOD-123H
0.130(3.3)
SOT-23
0.146(3.7)
0.012(0.3) Typ.
1. GATE
2. SOURCE
3. DRAIN
0.071(1.8)
0.056(1.4)
Mechanical data
APPLICATIONS
Epoxy
Load
•
Switch
: UL94-V0 rated
Devices
for Portable
flame retardant
•
Case : Molded plastic, SOD-123H
DC/DC Converter
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Pb-Free package is
2026
available
Method
RoHS
Polarity : Indicated by cathode band
•
product for packing code suffix ”G”
•
Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
•
Mounting
product for
Halogen free
Position : Any
packing code suffix “H”
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
MARKING: S4
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
V
RRM
V
RMS
V
DC
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
Value
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum
Average Forward
=25℃ unless otherwise noted)
ratings (T
a
Rectified Current
Maximum
I
O
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Parameter
I
FSM
R
ΘJA
C
J
T
J
TSTG
Unit
Symbol
V
DS
V
GS
I
D
I
DM
Drain-Source Voltage
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Gate-Source Voltage
-55 to +125
30
±20
3.3
15
0.50
0.70
40
120
V
Continuous Drain Current
Operating Temperature Range
Storage Temperature Range
-
65
to +175
-55 to +150
Pulsed Drain Current
CHARACTERISTICS
Continuous Source-Drain Diode Current
A
0.85
0.9
0.92
Maximum Power Dissipation
Maximum Forward Voltage at 1.0A DC
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
I
S
0.9
V
F
I
R
Maximum Average Reverse Current at @T A=25℃
P
D
R
θJA
T
J
T
STG
0.35
357
150
0.5
10
W
℃/W
℃
Thermal Resistance from Junction to Ambient (t≤5s)
@T A=125℃
Rated DC Blocking Voltage
Storage Temperature
NOTES:
Junction Temperature
applied reverse voltage of 4.0 VDC.
1- Measured at 1 MHZ and
-55 ~+150
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
