WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Enhancement Mode
protection.
P-Channel
Guardring for overvoltage
Field Effect Transistor
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
FEATURE
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
High
•
dense
product for packing code suffix "G"
low R
DS(ON)
.
RoHS
cell design for extremely
Halogen free product for packing code suffix "H"
SE340
FM120-M
THRU
FM1200-M
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-23
0.071(1.8)
0.056(1.4)
1. GATE
2. SOURCE
3. DRAIN
0.040(1.0)
0.024(0.6)
Exceptional on-resistance and maximum DC current capability
Mechanical data
Pb-Free package is available
•
Epoxy : UL94-V0 rated flame retardant
RoHS product for packing code suffix ”G”
•
Case : Molded plastic, SOD-123H
Halogen free product for packing code suffix “H”
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
D
MARKING: R1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
G
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
S
V
RRM
V
RMS
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
13
30
21
14
40
28
40
15
50
35
50
16
60
18
80
56
10
100
70
115
150
105
150
120
200
140
Maximum ratings ( T
a
=25℃ unless otherwise noted)
Maximum DC Blocking Voltage
20
V
DC
Maximum Average Forward Rectified Current
42
60
1.0
30
40
120
30
80
100
200
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated
Drain-Source Voltage
load (JEDEC method)
Parameter
Symbol
V
DS
V
GS
I
D
P
D
R
θJA
T
J
Value
-30
Unit
V
Typical Thermal Resistance (Note 2)
Gate-Source Voltage
Continuous Drain Current
Typical Junction Capacitance (Note 1)
Operating Temperature Range
-55 to +125
±12
-4.2
350
357
0.50
V
mW
℃
℃
-
65
to +175
A
-55 to +150
℃/W
Power Dissipation
Range
Storage Temperature
Junction Temperature
CHARACTERISTICS
Thermal Resistance from Junction to Ambient (t<5s)
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
V
F
@T A=125℃
150
0.70
0.5
10
0.85
0.9
0.92
Storage Temperature
Maximum Average Reverse Current at @T A=25℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
I
R
T
STG
-55~+150
2012-06
WILLAS ELECTRONIC COR
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
