1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
N-Channel Enhancement Mode Field Effect Transistor
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
DESCRIPTION
•
Guardring for overvoltage protection.
•
Ultra high-speed
use advanced trench technology to provide excellent
The
SE3404
switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
R
DS(ON)
and low gate charge. This device is suitable for use as a load
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
switch or in
free product for packing code suffix "H"
leads are separated to allow a
PWM applications.The source
Halogen
SOD-123H
SOT-23 Plastic-Encapsulate MOSFETS
Features
WILLAS
FM120-M
THRU
FM1200-M
Pb Free Product
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-23
0.071(1.8)
0.056(1.4)
1. GATE
2. SOURCE
3. DRAIN
Kelvin connection to the source,which may be used to bypass the source
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
inductance.
•
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Pb-Free package is available
Method 2026
RoHS product for packing code
band
”G”
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode
suffix
Halogen free
Position :
for packing code suffix “H”
•
Mounting
product
Any
•
Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
MARKING: R4
RATINGS
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
Mechanical data
Maximum ratings (T
a
=25℃ unless
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Parameter
Maximum Average Forward Rectified Current
12
13
otherwise
20
noted)
30
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
14
21
20
Symbol
30
14
40
28
40
15
50
35
50
16
60
42
60
Value
1.0
±20
30
18
80
56
80
10
100
70
100
115
150
105
150
Unit
120
200
140
200
Volts
Volts
Volts
Amps
Drain-source voltage
V
DS
V
GS
I
D
I
DM
-55
D
+125
P
to
30
V
V
A
A
W
℃/W
0.85
0.9
℃
Peak
Gate-source
Current 8.3 ms single half sine-wave
Forward Surge
voltage
superimposed on rated load (JEDEC method)
Amps
℃/W
PF
℃
℃
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Power dissipation
Storage Temperature Range
Continuous drain current (t
≤10s)
5.8
Pulsed drain current
(Note 1)
Typical Junction Capacitance
*
40
30
120
-
65
to +175
-55 to +150
0.35
357
Thermal resistance from junction to ambient
TSTG
Junction temperature
CHARACTERISTICS
V
F
I
R
R
θJA
T
stg
0.50
T
J
150
℃
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
0.70
150
-55~
0.5
10
0.92
Maximum Forward Voltage at 1.0A DC
Storage temperature
Maximum Average Reverse Current at @T A=25℃
Volts
mAmps
*
Repetitive rating : Pulse width
@T A=125℃
maximum junction temperature.
limited by
Rated DC Blocking Voltage
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
