WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
P-Channel 20-V(D-S) MOSFET
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
FEATURE
•
Ultra high-speed switching.
Excellent R
DS(ON)
, low gate charge,low gate voltages
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
APPLICATIONS
•
RoHS product for packing code suffix "G"
Load switch and
product for packing code suffix "H"
Halogen free
in PWM applicatopns
FM120-M
SE3415
THRU
FM1200-M
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-23
0.071(1.8)
0.056(1.4)
1. GATE
2. SOURCE
3. DRAIN
0.040(1.0)
0.024(0.6)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
Pb-Free package is available
•
Case : Molded plastic, SOD-123H
RoHS product for packing code suffix ”G”
MIL-STD-750 ,
•
Terminals :Plated terminals, solderable per
Method 2026
Halogen free product for packing code suffix “H”
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
D
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
G
MARKING:
R15
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
V
RRM
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
20
13
30
21
30
14
S
40
28
40
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
14
Maximum RMS Voltage
V
RMS
Maximum ratings (T
a
=25℃ unless otherwise noted)
Maximum Average Forward Rectified Current
Parameter
Symbol
V
DS
V
GS
I
D
P
D
Value
-20
Unit
V
Drain-Source Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Gate-Source Voltage
Typical Thermal Resistance (Note 2)
±8
-4.0
0.35
357
0.50
Continuous Drain Current
(Note 1)
Typical Junction Capacitance
(t≤10s)
Operating
Power Dissipation
Maximum
Temperature Range
(t≤10s)
-55 to +125
A
W
℃/W
-
65
to +175
-55 to +150
Thermal Resistance from Junction to Ambient
Operating Junction Temperature
CHARACTERISTICS
Maximum Forward Voltage
Storage Temperature
at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Storage Temperature Range
R
θJA
T
STG
T
J
150
℃
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
V
F
0.70
-55 ~+150
0.85
0.5
10
℃
0.9
0.92
@T A=125℃
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC COR
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
