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SE4812LT1 参数 Datasheet PDF下载

SE4812LT1图片预览
型号: SE4812LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 30V N沟道增强型MOSFET [30V N-Channel Enhancement-Mode MOSFET]
分类和应用:
文件页数/大小: 4 页 / 428 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
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WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
V
DS
= 30V
optimize board space.
Low
DS(ON)
loss, high efficiency.
R
power
, V
gs
@10V, I
ds
@8.5A =
38mΩ
High current capability, low forward voltage drop.
R
surge
, V
gs
@4.5V, I
ds
@5A =
52mΩ
High
DS(ON)
capability.
30V N-Channel Enhancement-Mode MOSFET
Features
FM120-M
THRU
SE4812LT1
FM1200-M
Pb Free Product
Package outline
SOD-123H
Guardring for overvoltage protection.
Ultra high-speed switching.
Features
Silicon epitaxial planar chip, metal silicon junction.
Advanced trench process technology
Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Pb-Free package
Mechanical data
is available
High Density Cell Design For Ultra Low On-Resistance
MIL-STD-19500 /228
High Power
for packing code suffix
Capability
RoHS product
and Current Handling
"G"
Halogen free product for packing code suffix "H"
SOT-23
0.040(1.0)
0.024(0.6)
RoHS product for packing code
Epoxy : UL94-V0 rated flame retardant
suffix ”G”
Halogen free product for packing code suffix “H”
Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
Polarity : Indicated by cathode band
Small Package
Mounting Position : Any
Outline
Weight : Approximated 0.011 gram
Surface Mount Device
0.031(0.8) Typ.
N - Channel
Typ.
0.031(0.8)
3
Simple Drive Requirement
Method 2026
Dimensions in inches and (millimeters)
1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave,
Information
of inductive load.
Ordering
60Hz, resistive
For capacitive load, derate current by 20%
Device
Marking
Shipping
Marking Code
SE4812LT1
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
 
2
 
RATINGS
N48
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
Maximum Recurrent Peak Reverse Voltage
3000/Tape&Reel
12
20
V
RRM
V
RMS
V
DC
I
O
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
 
otherwise
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Volts
Volts
Volts
Amps
Maximum
8.3 ms single half sine-wave
Peak Forward Surge Current
Ratings and Thermal
superimposed on rated load (JEDEC method)
 
Characteristics
I
FSM
(T
A
= 25
o
C unless
noted)
 
Limit
 
Amps
Typical Thermal Resistance (Note 2)
Typical Junction
V
DS
Capacitance (Note 1)
Operating Temperature Range
V
Storage Temperature Range
GS
Symbol
Parameter
R
ΘJA
 
Unit
V
Drain-Source Voltage
C
J
T
J
Gate-Source Voltage
TSTG
 
-55 to +125
 
℃/W
PF
UNIT
Volts
mAmps
30
± 20
6.9
 
-
65
to +175
-55 to +150
 
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
 
A
1)
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
I
DM
30
Pulsed Drain Current
V
F
0.50
0.70
I
D
Continuous Drain Current
0.85
Maximum Average Reverse Current at @T A=25℃
P
D
@T A=125℃
I
R
Maximum Power Dissipation
TA = 25 C
0.5
TA = 75 C
10
o
o
0.9
0.92
 
2
W
1.44
-55 to 150
24
o
o
NOTES:
T
J
, T
stg
R
θJC
R
θJA
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted)
2)
C
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
 
 
2- Thermal Resistance From Junction to Ambient
62.5
C/W
Note:
1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2
2oz Cu PCB board
2. 1-in
3. Guaranteed by design; not subject to production testing
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.