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SEMF3V3LC-TG-WS 参数 Datasheet PDF下载

SEMF3V3LC-TG-WS图片预览
型号: SEMF3V3LC-TG-WS
PDF下载: 下载PDF文件 查看货源
内容描述: 低电容四阵列的ESD保护说明 [Low Capacitance Quad Array for ESD Protection Description]
分类和应用:
文件页数/大小: 4 页 / 546 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
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WILLAS
Low Capacitance Quad Array for ESD Protection Description
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Batch process design, excellent power dissipation offers
SEMF3V3LC
FM120-M
THRU
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
General
profile surface mounted application in order to
Features
Low
Description
optimize board
transient voltage suppressor
This integrated
space.
Low power loss, high efficiency.
device
High current capability, low forward voltage drop.
(TVS) is designed for applications requiring
High surge capability.
transient overvoltage protection, printers, business
Guardring for overvoltage protection.
machines, communication systems, medical
Ultra high-speed switching.
equipment, and other applications.
silicon junction.
Silicon epitaxial planar chip, metal
Its integrated
provides
meet
effective and reliable
design
Lead-free parts
very
environmental standards of
better reverse leakage current and thermal resistance.
Four Separate Unidirectional Configurations for
Protection
Power Dissipation: 380mW
Small SOT-353 SMT Package
Low Capacitance
Complies to USB 1.1 Low Speed & Speed
Specifications
These are Pb-Free Devices
0.040(1.0)
0.024(0.6)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Low Leakage Current < 1
μA
@ 3Volts
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
protection
product for packing
lines
suffix "G"
only one
RoHS
for separate
code
using
Halogen free
devices are ideal
suffix "H"
package. These
product for packing code
for situations
where board space is at a premium.
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
,
Applications
Terminals :Plated terminals, solderable per MIL-STD-750
Serial and Parallel
2026
Method
Ports
Microprocessor Based Equipment
Polarity : Indicated by cathode band
Mounting Position : Any
Notebooks, Desktops, Servers
Weight Approximated 0.011 gram
Cellular
:
and Portable Equipment
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive
Marking code
of inductive load.
Type number
For capacitive load, derate current by 20%
Mechanical data
Pb-Free package is available
0.031(0.8) Typ.
RoHS product for packing code suffix ”G”
0.031(0.8) Typ.
Halogen free product for packing code suffix “H”
Moisture Sensitivity Level
inches and (millimeters)
Dimensions in
1
Complies with the following standards
IEC61000-4-2
8 kV(contact discharge)
MIL STD 883E - Method 3015-7 Class 3
25 kV HBM (Human Body Model)
14
40
28
40
15
50
35
50
16
60
42
60
1.0
 
30
18
80
56
80
13
30
21
30
10
100
70
100
115
150
105
150
120
200
140
200
Marking
MAXIMUM RATINGS AND ELECTRICAL
Level 4 15 kV (air discharge)
CHARACTERISTICS
 
SEMF3V3LC
RATINGS
VB
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Functional
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
 
diagram
V
RRM
V
RMS
V
DC
I
O
 
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
V
V
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
 
 
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
 
 
-55 to +125
40
120
 
-55 to +150
SOT-353
 
-
65
to +175
 
Maximum Ratings (T
A
=25°C)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Symbol
Rated DC Blocking Voltage
Maximum Average Reverse Current at @T A=25℃
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
Parameter
0.50
0.70
0.5
10
0.85
Value
Units
0.9
W
mW
℃/W
Mw/℃
0.92
 
P
PK
P
D
I
R
Peak Power Dissipation(8×20μs@T
A
=25℃)
@T A=125℃
30
380
327
3.05
150
m
 
NOTES:
Steady State Power-1 Diode
Thermal Resistance, Junction-to-Ambient
Maximum Junction Temperature
Operation Junction and Storage Temperature Range
Lead Solder Temperature(10 seconds duration)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
 
 
Above 25℃,
Derate
2- Thermal Resistance From Junction to Ambient
T
Jmax
T
J
T
stg
T
L
R
θ
JA
-55 to +150
260
2012-0
2012-06
WILLAS ELECTRONIC CORP.
CORP
WILLAS ELECTRONIC