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SESOTA05BC 参数 Datasheet PDF下载

SESOTA05BC图片预览
型号: SESOTA05BC
PDF下载: 下载PDF文件 查看货源
内容描述: 低电容双向双重ESD保护二极管 [Low capacitance bi-directional double ESD protection diode]
分类和应用: 二极管
文件页数/大小: 4 页 / 352 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
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WILLAS
Low capacitance bi-directional double ESD protection diode
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FM120-M
SESOTA05BC
THRU
FM1200-M
Package outline
SOD-123H
Pb Free Produc
Features
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated
waveform
Fig2. ESD pulse
0.011 gram
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Dimensions in inches and (millimeters)
Fig3.Peak pulse power dissipation as a
according to IEC 61000-4-2
ELECTRICAL CHARACTERISTICS
time;typical values
function of pulse
MAXIMUM RATINGS AND
 
Application Note
Electrostatic
Marking Code
Maximum RMS Voltage
discharge (ESD) is a major cause of failure in electronic systems. Transient
10
Voltage
115
12
13
14
15
16
18
20
30
40
50
60
80
V
RRM
choice for ESD protection. They are capable of clamping the
100
incoming
150
70
105
150
V
DC
I
O
20
30
40
50
60
80
100
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Recurrent Peak Reverse Voltage
Suppressors (TVS) are an ideal
120
200
140
200
Maximum DC Blocking Voltage
 
14
21
35
56
V
RMS
transient to a low enough level such that damage to the protected
28
semiconductor
42
prevented.
is
1.0
Maximum Average Forward Rectified Current
Surface mount TVS arrays offer the best choice for minimal lead inductance. They serve as parallel
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
protection elements, connected between
 
the signal line to ground. As the transient rises above the
 
operating voltage of the device, the TVS
I
FSM
array becomes a low impedance path
30
diverting the transient
 
current to ground. The SESOTA05BC
R
array is the ideal board evel protection of ESD sensitive
 
 
40
ΘJA
 
 
120
semiconductor components.
Typical Junction Capacitance (Note 1)
C
J
 
-55 to +125
-55
Operating Temperature Range
T
The tiny SOT-23 package allows design
J
flexibility in the design of high density boards where
to +150
the space
Typical Thermal Resistance (Note 2)
Storage Temperature Range
 
saving is at a premium. This enables to shorten the routing and contributes to hardening against ESD.
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
TSTG
-
65
to +175
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
 
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP