10.0A
SURFACE MOUNT SUPER
FAST
RECTIFIERS -50V- 600V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
D2PAK PACKAGE
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
WILLAS
FM120-M
SGFM101C-D2
FM1200-M
SGFM108C-D2
THRU
THRU
Pb Free Produc
Features
Package outline
Package outline
D2PAK
SOD-123H
Features
profile surface mounted application in order to
•
Low
•
•
•
•
•
•
•
optimize board space.
•
Low power loss, high efficiency.
Batch process design, excellent power dissipation offers
better
•
High current capability,
and thermal resistance.
reverse leakage current
low forward voltage drop.
•
High surge capability.
Low profile surface mounted application in order to
•
Guardring for overvoltage protection.
optimize board space..
High current capability.
switching.
•
Ultra high-speed
Super
•
Silicon epitaxial
for switching
metal silicon junction.
fast reovery time
planar chip,
mode application.
High surge current
parts meet environmental standards of
•
Lead-free
capability.
MIL-STD-19500 /228
Glass passivated chip junction.
•
RoHS product
enironmental standards
Lead-free parts meet
for packing code suffix "G"
of
Halogen free
MIL-STD-19500/228
product for packing code suffix "H"
better reverse leakage current and thermal resistance.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.046(1.20)
0.032(0.80)
0.402(10.20)
0.386(9.80)
0.185(4.70)
0.169(4.30)
0.071(1.8)
0.056(1.4)
0.055(1.40 )
0.047(1.20)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
Mechanical data
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
•
Epoxy:UL94-V0 rated flame retardant
•
Case : Molded plastic, TO-263 / D2PAK
•
Polarity : Indicated by cathode band
•
Terminals : Solder plated, solderable per
•
Mounting Position : Any
2026
MIL-STD-750, Method
•
: Indicated by cathode
0.011
•
Polarity
Weight : Approximated
band
gram
Method 2026
0.370(9.40)
0.354(9.00)
0.040(1.0)
0.012(0.30 )
0.024(0.6)
0.004(0.10 )
0.192(4.8)
0.176(4.4)
0.031(0.8) Typ.
0.063(1.60)
0.055(1.40)
0.024(0.60)
0.016(0.40)
0.031(0.8) Typ.
0.108( 2.70)
0.205(5.20)
0.189(4.80)
Dimensions
0.092( 2.30)
in inches and (millimeters)
•
Mounting Position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
•
Ratings at
Approximated
temperature unless otherwise specified.
Weight :
1.46 gram
25℃ ambient
Pb-Free package is available
•
Single phase half wave, 60Hz, resistive of inductive load.
Dimensions in inches and (millimeters)
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum Average Forward Rectified Current
PARAMETER
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
PIN 1
12
20
14
13
30
21
14
40
28
15
50
35
16
60
42
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
PIN 3
PIN 2
V
RRM
V
RMS
18
80
56
10
100
70
115
150
105
150
120
200
140
200
Maximum DC Blocking Voltage
20
30
V
Characteristics
40
Maximum ratings and Electrical
DC
(AT
50
o
60
80
100
T
A
=25 C unless otherwise noted)
I
O
CONDITIONS
O
Ambient temperature = 50 C
Forward
Surge Current 8.3 ms
Peak Forward
rectified current
single half sine-wave
I
FSM
superimposed on rated load (JEDEC method)
8.3ms single half sine-wave superimposed on
Forward surge current
rate load (JEDEC methode)
Typical Thermal Resistance (Note 2)
R
ΘJA
Typical Junction Capacitance (Note 1)
Symbol
1.0
MIN.
I
O
30
I
FSM
I
R
40
120
TYP.
MAX.
10.0
UNIT
A
A
150
Reverse current
Operating Temperature Range
Storage Temperature Range
Diode junction capacitance
f=1MHz and
TSTG
applied 4V DC reverse voltage
V
R
= V
RRM
T
J
C
J
25
O
C
=
V
R
= V
RRM
T
J
T
J
125
O
C
=
-55 to +125
-65
C
J
-
65
to +175
80
T
STG
10
-55 to +150
50
+175
µA
pF
O
Storage temperature
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
C
Maximum Forward Voltage at 1.0A DC
V
@T
V
V
Current at
RMS
A=25℃
R
SYMBOLS
Maximum Average Reverse
RRM
(V)
Rated DC Blocking Voltage
*1
*2
*3
(V)
(V)
A=125℃
@T
35
70
140
50
100
V
F
*4
V
F
I
R
(V)
t
rr
(ns)
*5
0.50
Operating
temperature
T
J
, (
O
C)
0.9
0.70
0.85
*1 Repetitive peak reverse voltage
0.5
10
*2 RMS voltage
0.92
NOTES:
SGFM101C-D2
SGFM102C-D2
SGFM104C-D2
SGFM108C-D2
50
100
200
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.975
35
1.30
1.70
-55 to +150
*3 Continuous reverse voltage
*4 Maximum forward voltage@I
F
=5.0A
*5 Reverse recovery time, note 1
2- Thermal Resistance From Junction to Ambient
200
SGFM106C-D2
400
600
280
420
400
600
Note 1. Reverse recovery time test condition, I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2012-09
2012-06
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
