1.5A
LOW VF
SCHOTTKY BARRIER RECTIFIERS -
40V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-323-L PACKAGE
SOD-123
PACKAGE
WILLAS
FM120-M
SL24-N
FM1200-M
Pb Free Product
THRU
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Features
Package outline
SOD-123H
Features
board space.
optimize
•
Low profile surface mounted application in order to
Package outline
0.146(3.7)
0.130(3.3)
SOD-323-L
0.012(0.3) Typ.
•
Batch process design, excellent power dissipation offers
•
Low power loss, high efficiency.
better reverse leakage current and thermal resistance.
•
High current capability, low forward voltage drop.
•
Low
High surge capability.
application in order to
•
profile surface mounted
optimize board space.
•
Guardring for overvoltage protection.
•
Very tiny plastic SMD package.
•
Ultra high-speed switching.
•
Low power loss, high efficiency.
•
Silicon epitaxial planar chip, metal silicon junction.
•
High current capability, very low forward voltage drop.
•
Lead-free parts meet environmental standards of
surge capability.
•
High
MIL-STD-19500 /228
•
Guardring
product for packing code suffix "G"
•
RoHS
for overvoltage protection.
high-speed switching.
•
Ultra
Halogen free product for packing code suffix "H"
•
Silicon epitaxial planar chip, metal silicon junction.
Mechanical data
•
Moisture Sensitivity Level 1
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Mechanical data
•
•
•
Method 2026
Epoxy : UL94-V0 rated flame retardant
•
Polarity : Indicated by cathode band
Case : Molded plastic, SOD-323-L
•
Mounting Position : Any
Terminals :Plated terminals, solderable per MIL-STD-750,
•
Weight : Approximated 0.011 gram
Method 2026
0.106 (2.7)
0.091 (2.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.057 (1.45)
0.041 (1.05)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
0.047 (1.2)
0.031 (0.8)
0.016(0.4) Typ.
0.016(0.4)
Dimensions in inches and (millimeters)
Typ.
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
•
Mounting Position Any
Ratings at 25℃ ambient
:
temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
•
Weight : Approximated 0.008 gram
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum
o
15
18
10
T
A
=25 C
16
unless otherwise noted)
20
30
40
50
60
80
100
Maximum Recurrent Peak Reverse Voltage
V
RRM
TYP. MAX.
PARAMETER
CONDITIONS
Symbol MIN.
14
21
28
35
42
56
70
Maximum RMS Voltage
V
RMS
I
O
1.5
Forward rectified current
See Fig.2
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
V
DC
30
I
FSM
1.0
Forward surge current
Maximum Average Forward Rectified Current
8.3ms single half sine-wave superimposed on
I
O
rate load (JEDEC methode)
Peak Forward Surge Current 8.3 ms single half sine-wave
15V T
J
= 25
O
C
V
R
=
I
R
30
65
100.0
Reverse current
I
FSM
superimposed on rated load (JEDEC method)
Thermal resistance
Junction to ambient
R
θJA
80
Typical
Diode junction capacitance
Thermal Resistance (Note 2)
R
ΘJA
C
J
40
130
f=1MHz and applied 4V DC reverse voltage
120
Typical Junction Capacitance (Note 1)
C
J
Storage temperature
+150
-55
T
STG
-55 to +125
-55 to +150
Operating Temperature Range
T
J
I
F
= 100mA
240
250
-
65
to +175
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
12
13
14
ratings and Electrical Characteristics
(AT
115
150
UNIT
105
A
150
120
200
140
200
Volt
Volt
Volt
A
Am
uA
O
Am
C/W
pF
O
℃/W
C
PF
℃
Storage Temperature Range
TSTG
℃
Forward voltage
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
I
F
= 500mA
V
F
300
350
mV
FM1100-MH
FM1150-MH
FM1200-MH
UNI
I
F
= 2000mA
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
430
SYMBOL
450
Vol
0.9
0.92
V
F
0.50
0.70
0.85
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
I
R
0.5
10
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Operating
V
to
SYMBOLS
2- Thermal Resistance
V
RRM
Junction
RMS
Ambient
V
R
From
(V)
40
(V)
28
SL24-N
*1
*2
*3
(V)
40
temperature
T
J
, (
O
C)
-55 to +100
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage@I
R
=1mA
2012-06
WILLAS ELECTRONIC CORP.
201 -
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
