FM120-M
TK3904LLD03
THRU
WBFBP-03D Plastic-Encapsulate
RECTIFIERS -20V- 200V
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER
Transistors
SOD-123
•
Batch process design, excellent power dissipation offers
TRANSISTOR
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
DESCRIPTION
optimize board space.
NPN Epitaxial
Low power loss, high efficiency.
•
Silicon Transistor
•
High current capability, low forward voltage drop.
FEATURES
•
High surge capability.
•
Die Construction
Epitaxial Planar
Guardring for overvoltage protection.
•
PNP Type Available (TK3906LLD03)
Complementary
Ultra high-speed switching.
•
Silicon epitaxial planar
Ultra-Small Surface Mount Package
chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
Also Available in Lead Free Version
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
•
APPLICATION
Halogen free product for packing code suffix "H"
WILLAS
PACKAGE
Pb Free Prod
Features
Package outline
SOD-123H
C
WBFBP-03D
(1.0×1.0×0.5)
unit: mm
TOP
0.130(3.3)
B
E
C
BACK
E
0.146(3.7)
0.012(0.3) Typ.
1. BASE
2. EMITTER
3. COLLECTOR
0.071(1.8)
0.056(1.4)
•
Weight : Approximated 0.011 gram
im
V
40
6
V
V
12
A
20
MAXIMUM
unless otherwise noted)
MAXIMUM RATINGS(T
a
=25℃
RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃
Parameter
ambient temperature unless
Value
otherwise specified.
Symbol
Unit
V
CBO
V
CEO
I
C
P
C
T
J
T
stg
Single phase half wave, 60Hz, resistive of inductive load.
Collector-Base Voltage
60
For capacitive load, derate current by 20%
Collector-Emitter Voltage
RATINGS
Maximum Recurrent Peak Reverse Voltage
Collector Current -Continuous
Maximum RMS Voltage
Collector Dissipation
Maximum DC Blocking Voltage
Pr
el
Emitter-Base Voltage
V
EBO
Marking Code
ina
C
RoHS product for packing code suffix ”G”
•
Polarity : Indicated by cathode band
Halogen free product for packing code suffix “H”
•
Mounting Position : Any
Method 2026
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
ry
MARKING:1N
General Purpose Amplifier, switching
Mechanical data
For portable
•
equipment:(i.e.
rated flame retardant
MD,CD-ROM,
Mobile phone,MP3,
Epoxy : UL94-V0
DVD-ROM, Note book PC, etc.)
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals,
Pb-Free package is available
solderable per MIL-STD-750
B
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
1N
B
E
0.2
V
RRM
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
40
Min
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
0.1
V
RMS
W
14
Junction Temperature
Maximum Average Forward Rectified Current
Storage Temperature
-55~150
I
O
150
V
DC
℃
20
I
FSM
℃
Peak Forward Surge Current 8.3 ms single half sine-wave
ELECTRICAL CHARACTERISTICS (T
a
=25℃
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Parameter
Collector-base breakdown voltage
Operating Temperature Range
Storage Temperature Range
Collector-emitter breakdown voltage
Symbol
C
J
Test conditions
-55
V
(BR)CBO
T
J
I
C
=10μA,I
E
=0
to +125
I
C
V
(BR)CEO
TSTG
=1mA,I
B
=0
V
(BR)EBO
I
CEX
I
E
=10μA,I
C
=0
V
EB
=5V,I
C
=0
V
CE
=1V,I
C
=0.1mA
V
CE
=1V,I
C
=1mA
V
CE
=1V,I
C
=10mA
V
CE
=1V,I
C
=50mA
V
CE
=1V,I
C
=100mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
V
F
I
R
unless otherwise specified)
R
ΘJA
Typ
Max
Unit
V
V
V
60
-
65
to +175
40
-55 to +150
Emitter-base breakdown voltage
Collector cut-off current
at 1.0A DC
Maximum Forward Voltage
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-
6
V
CE
=30V,V
EB(off)
=3V
I
EBO
Emitter cut-off current
Maximum Average Reverse Current at @T A=25℃
h
FE(1)
@T A=125℃
Rated DC Blocking Voltage
0.50
0.70
0.5
0.85
0.05
0.1
μA
0.9
μA
0.92
DC current gain
NOTES:
h
FE(2)
h
FE(4)
h
FE(5)
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
40
10
70
100
60
30
0.2
0.3
0.65
300
0.85
0.95
V
V
V
V
300
h
FE(3)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
2012-06
V
CE
=20V,I
C
=10mA,f=100MHz
MHz
WILLAS ELECTRONIC CO
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
