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TK3906LLD03 参数 Datasheet PDF下载

TK3906LLD03图片预览
型号: TK3906LLD03
PDF下载: 下载PDF文件 查看货源
内容描述: WBFBP - 03D塑封装晶体管 [WBFBP-03D Plastic-Encapsulate Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 323 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号TK3906LLD03的Datasheet PDF文件第2页  
FM120-M
THRU
TK3906LLD03
WBFBP-03D Plastic-Encapsulate
RECTIFIERS -20V- 200V
Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER
SOD-123
Batch process design, excellent power dissipation offers
TRANSISTOR
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
DESCRIPTION
Low power loss, high efficiency.
PNP Epitaxial Silicon Transistor
High current capability, low forward voltage drop.
High surge capability.
FEATURES
Guardring for overvoltage protection.
Epitaxial Planar Die Construction
Ultra high-speed switching.
Complementary NPN Type Available (TK3904LLD03)
junction.
Silicon epitaxial planar chip, metal silicon
Ultra-Small Surface Mount Package
environmental standards of
Lead-free parts meet
MIL-STD-19500 /228
Also Available in Lead Free Version
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
C
WBFBP-03D
(1.0×1.0×0.5)
unit: mm
TOP
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
B
1. BASE
2. EMITTER
3. COLLECTOR
E
C
0.071(1.8)
0.056(1.4)
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
APPLICATION
Mechanical data
General Purpose Amplifier, switching
For portable equipment:(i.e.
rated flame retardant
Epoxy : UL94-V0
Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,
Note book PC, etc.)
SOD-123H
Case : Molded plastic,
,
Terminals
is available
solderable per MIL-STD-750
:Plated terminals,
Pb-Free package
BACK
E
B
0.040(1.0)
0.024(0.6)
Halogen free product for packing code suffix “H”
Mounting Position : Any
Weight : Approximated 0.011 gram
im
-5
12
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS(T
a
=25℃ unless otherwise noted)
Ratings at 25℃ ambient temperature unless otherwise specified.
Symbol
Single phase half wave,
Parameter
60Hz, resistive of inductive load.
Value
V
CBO
For capacitive load, derate current by 20%
Collector-Base Voltage
-40
 
ina
Unit
V
14
40
28
40
15
50
35
50
20
V
RRM
-200
14
V
RMS
100
I
O
13
V
30
mA
21
30
20
1250
RoHS product for
:
packing
by cathode band
Polarity Indicated
code suffix ”G”
Method 2026
V
CEO
I
C
P
D
T
J
T
stg
Collector-Emitter Voltage
RATINGS
V
SYMBOL
-40
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
16
60
42
60
1.0
 
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum Recurrent Peak Reverse Voltage
Collector Current -Continuous
Maximum RMS
Dissipation
Power
Voltage
Pr
el
150
V
EBO
Marking Code
Emitter-Base Voltage
R
Ɵ
JA
Maximum DC Blocking Voltage
Junction to Ambient
V
DC
Thermal Resistance,
 
Maximum Average Forward Rectified Current
Operating Temperature
ry
3N
B
E
mW
℃/W
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MARKING:3N
C
Storage and Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
Parameter
superimposed on rated load (JEDEC method)
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
 
Typical Thermal Resistance (Note 2)
R
ΘJA
 
-55~150
I
FSM
 
Typ
Collector-base breakdown voltage
Operating Temperature Range
Typical Junction Capacitance (Note 1)
Symbol
V
(BR)CBO
V
(BR)EBO
I
EBO
C
J
T
J
Test conditions
 
MIin
I
C
=-10μA,I
E
=0
to +125
-55
I
E
=-10μA,I
C
=0
 
-40
-5
40
120
 
 
Max
Unit
V
V
V
Collector-emitter breakdown voltage
Storage Temperature Range
-55 to +150
V
(BR)CEO
I
C
=-1mA,I
B
=0
TSTG
-
-40
to +175
65
 
Emitter-base breakdown voltage
Emitter cut-off current
 
CHARACTERISTICS
Collector cut-off current
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
NOTES:
I
CEX
SYMBOL
FM120-MH
EB(off)
=-3V
V
CE
=-30V,V
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
-0.05
μA
V
F
I
R
Maximum Average Reverse Current at @T A=25℃
V
EB
=-5V,I
C
=0
V
CE
=-1V,I
C
=-1mA
V
CE
=-1V,I
C
=-10mA
V
CE
=-1V,I
C
=-50mA
0.50
0.70
0.85
0.5
-0.1
μA
0.9
0.92
 
h
FE(1)
@T A=125℃
h
FE(2)
h
FE(4)
h
FE(5)
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
V
CE
=-1V,I
C
=-0.1mA
60
10
80
100
60
30
-0.25
-0.4
-0.65
250
WILLAS
-0.85
-0.95
V
V
V
V
300
DC current gain
1 MHZ and applied reverse voltage of
h
FE(3)
1- Measured at
4.0 VDC.
 
 
2- Thermal Resistance From Junction to Ambient
V
CE
=-1V,I
C
=-100mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
V
CE
=-20V,I
C
=-10mA,f=100MHz
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
2012-06
MHz
ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.