FM120-M
THRU
TK3906LLD03
WBFBP-03D Plastic-Encapsulate
RECTIFIERS -20V- 200V
Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER
SOD-123
•
Batch process design, excellent power dissipation offers
TRANSISTOR
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
DESCRIPTION
•
Low power loss, high efficiency.
PNP Epitaxial Silicon Transistor
•
High current capability, low forward voltage drop.
•
High surge capability.
FEATURES
•
Guardring for overvoltage protection.
Epitaxial Planar Die Construction
•
Ultra high-speed switching.
Complementary NPN Type Available (TK3904LLD03)
junction.
•
Silicon epitaxial planar chip, metal silicon
Ultra-Small Surface Mount Package
environmental standards of
•
Lead-free parts meet
MIL-STD-19500 /228
Also Available in Lead Free Version
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
C
WBFBP-03D
(1.0×1.0×0.5)
unit: mm
TOP
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
B
1. BASE
2. EMITTER
3. COLLECTOR
E
C
0.071(1.8)
0.056(1.4)
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
APPLICATION
Mechanical data
General Purpose Amplifier, switching
For portable equipment:(i.e.
rated flame retardant
•
Epoxy : UL94-V0
Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,
•
Note book PC, etc.)
SOD-123H
Case : Molded plastic,
,
•
Terminals
is available
solderable per MIL-STD-750
:Plated terminals,
Pb-Free package
BACK
E
B
0.040(1.0)
0.024(0.6)
Halogen free product for packing code suffix “H”
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
im
-5
12
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS(T
a
=25℃ unless otherwise noted)
Ratings at 25℃ ambient temperature unless otherwise specified.
Symbol
Single phase half wave,
Parameter
60Hz, resistive of inductive load.
Value
V
CBO
For capacitive load, derate current by 20%
Collector-Base Voltage
-40
ina
Unit
V
14
40
28
40
15
50
35
50
20
V
RRM
-200
14
V
RMS
100
I
O
13
V
30
mA
21
30
20
1250
RoHS product for
:
packing
by cathode band
•
Polarity Indicated
code suffix ”G”
Method 2026
V
CEO
I
C
P
D
T
J
T
stg
Collector-Emitter Voltage
RATINGS
V
SYMBOL
-40
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum Recurrent Peak Reverse Voltage
Collector Current -Continuous
Maximum RMS
Dissipation
Power
Voltage
Pr
el
150
V
EBO
Marking Code
Emitter-Base Voltage
R
Ɵ
JA
Maximum DC Blocking Voltage
Junction to Ambient
V
DC
Thermal Resistance,
Maximum Average Forward Rectified Current
Operating Temperature
ry
3N
B
E
mW
℃
℃
℃/W
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MARKING:3N
C
Storage and Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
Parameter
superimposed on rated load (JEDEC method)
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Typical Thermal Resistance (Note 2)
R
ΘJA
-55~150
I
FSM
Typ
Collector-base breakdown voltage
Operating Temperature Range
Typical Junction Capacitance (Note 1)
Symbol
V
(BR)CBO
V
(BR)EBO
I
EBO
C
J
T
J
Test conditions
MIin
I
C
=-10μA,I
E
=0
to +125
-55
I
E
=-10μA,I
C
=0
-40
-5
40
120
Max
Unit
V
V
V
Collector-emitter breakdown voltage
Storage Temperature Range
-55 to +150
V
(BR)CEO
I
C
=-1mA,I
B
=0
TSTG
-
-40
to +175
65
Emitter-base breakdown voltage
Emitter cut-off current
CHARACTERISTICS
Collector cut-off current
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
NOTES:
I
CEX
SYMBOL
FM120-MH
EB(off)
=-3V
V
CE
=-30V,V
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
-0.05
μA
V
F
I
R
Maximum Average Reverse Current at @T A=25℃
V
EB
=-5V,I
C
=0
V
CE
=-1V,I
C
=-1mA
V
CE
=-1V,I
C
=-10mA
V
CE
=-1V,I
C
=-50mA
0.50
0.70
0.85
0.5
-0.1
μA
0.9
0.92
h
FE(1)
@T A=125℃
h
FE(2)
h
FE(4)
h
FE(5)
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
V
CE
=-1V,I
C
=-0.1mA
60
10
80
100
60
30
-0.25
-0.4
-0.65
250
WILLAS
-0.85
-0.95
V
V
V
V
300
DC current gain
1 MHZ and applied reverse voltage of
h
FE(3)
1- Measured at
4.0 VDC.
2- Thermal Resistance From Junction to Ambient
V
CE
=-1V,I
C
=-100mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
V
CE
=-20V,I
C
=-10mA,f=100MHz
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
2012-06
MHz
ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.