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W25Q16VSSIG 参数 Datasheet PDF下载

W25Q16VSSIG图片预览
型号: W25Q16VSSIG
PDF下载: 下载PDF文件 查看货源
内容描述: 具有双路和四路SPI 16M位串行闪存 [16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 60 页 / 1415 K
品牌: WINBOND [ WINBOND ]
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W25Q16V
10.2.4 Write Enable (06h)
The Write Enable instruction (Figure 4) sets the Write Enable Latch (WEL) bit in the Status Register to a
1. The WEL bit must be set prior to every Page Program, Sector Erase, Block Erase, Chip Erase and
Write Status Register instruction. The Write Enable instruction is entered by driving /CS low, shifting the
instruction code “06h” into the Data Input (DI) pin on the rising edge of CLK, and then driving /CS high.
Figure 4. Write Enable Instruction Sequence Diagram
10.2.5 Write Disable (04h)
The Write Disable instruction (Figure 5) resets the Write Enable Latch (WEL) bit in the Status Register
to a 0. The Write Disable instruction is entered by driving /CS low, shifting the instruction code “04h” into
the DI pin and then driving /CS high. Note that the WEL bit is automatically reset after Power-up and
upon completion of the Write Status Register, Page Program, Sector Erase, Block Erase and Chip
Erase instructions.
Figure 5. Write Disable Instruction Sequence Diagram
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Publication Release Date: October 7, 2009
Revision E