W27E010
128K
×
8 ELECTRICALLY ERASABLE EPROM
GENERAL DESCRIPTION
The W27E010 is a high speed, low power Electrically Erasable and Programmable Read Only
Memory organized as 131072
×
8 bits that operates on a single 5 volt power supply. The W27E010
provides an electrical chip erase function.
FEATURES
•
•
•
•
•
High speed access time:
45/55/70/90/120 nS (max.)
Read operating current: 30 mA (typ.)
Erase/Programming operating current:
1 mA (typ.)
Standby current: 5
µA
(typ.)
Single 5V power supply
•
•
•
•
•
+14V erase/+12V programming voltage
Fully static operation
All inputs and outputs directly TTL/CMOS
compatible
Three-state outputs
Available packages: 32-pin 600 mil DIP,
450 mil SOP and PLCC
PIN CONFIGURATIONS
Vpp
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Q1
Q2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
/
V V P
p c G N
p c M C
3
2
3
1
Vcc
PGM
NC
A14
A13
A8
A9
A11
OE
A10
CE
Q7
Q6
Q5
Q4
Q3
BLOCK DIAGRAM
PGM
CE
OE
CONTROL
OUTPUT
BUFFER
Q0
.
.
Q7
A0
.
.
A16
DECODER
CORE
ARRAY
V
CC
GND
V
PP
PIN DESCRIPTION
SYMBOL
A0−A16
Q0−Q7
CE
OE
PGM
V
PP
V
CC
GND
NC
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable
Output Enable
Program Enable
Program/Erase Supply Voltage
Power Supply
Ground
No Connection
A A A
1 1 1
2 5 6
A7
A6
A5
A4
A3
A2
A1
A0
Q0
4
5
6
7
8
9
10
11
12 1
13 4
3 2
1
32-pin PLCC
1
5
1
6
1 1
7 8
1
9
3
0 29
28
27
26
25
24
23
2 22
0 21
A14
A13
A8
A9
A11
OE
A10
CE
Q7
Q Q G Q Q Q Q
1 2 N 3 4 5 6
D
-1-
Publication Release Date: June 2000
Revision A6
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