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W27E257P-10 参数 Datasheet PDF下载

W27E257P-10图片预览
型号: W27E257P-10
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8的电可擦除EPROM [32K X 8 ELECTRICALLY ERASABLE EPROM]
分类和应用: 存储内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 14 页 / 227 K
品牌: WINBOND [ WINBOND ]
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W27E257
32K
×
8 ELECTRICALLY ERASABLE EPROM
GENERAL DESCRIPTION
The W27E257 is a high-speed, low-power Electrically Erasable and Programmable Read Only
Memory organized as 32768
×
8 bits that operates on a single 5 volt power supply. The W27E257
provides an electrical chip erase function. This part was the same EPROM Writer's utilities as the
W27E256.
FEATURES
High speed access time:
100/120/150 nS (max.)
Read operating current: 15 mA (typ.)
Erase/Programming operating current
1 mA (typ.)
Standby current: 5
µA
(typ.)
Single 5V power supply
+14V erase/+12V programming voltage
Fully static operation
All inputs and outputs directly TTL/CMOS
compatible
Three-state outputs
Available packages: 28-pin 600 mil DIP and
32-pin PLCC
PIN CONFIGURATIONS
V
PP
A12
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Q1
Q2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28-pin
DIP
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
A14
A13
A8
A9
A11
OE
A10
CE
Q7
Q6
Q5
Q4
Q3
BLOCK DIAGRAM
Q0
.
.
Q7
CE
OE
CONTROL
OUTPUT
BUFFER
A0
.
.
A14
VCC
GND
VPP
DECODER
CORE
ARRAY
A V
V A A
A 1 P N C 1 1
7 2 P C C 4 3
4 3 2
A6
A5
A4
A3
A2
A1
A0
NC
Q0
5
6
7
8
9
10
11
12 1
13 4
1
3
2
3
1
3
0 29
28
27
26
25
24
23
22
2
0 21
PIN DESCRIPTION
A8
A9
A11
NC
OE
A10
CE
Q7
Q6
SYMBOL
A0−A14
Q0−Q7
CE
OE
V
PP
V
CC
GND
NC
32-pin
PLCC
1
5
1
6
1 1
7 8
1
9
Q Q G N
1 2 N C
D
Q Q Q
3 4 5
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable
Output Enable
Program/Erase Supply Voltage
Power Supply
Ground
No Connection
Publication Release Date: January 1997
Revision A3
-1-