W28V400B/T
Block Erase And Word/Byte Write Performance(3)
VDD = 2.7V to 3.6V, TA = 0° C to +70° C
VPP = 2.7V − 3.6V VPP = 4.5V − 5.5VVPP = 11.4V − 12.6V
TYP.(1) MAX. TYP.(1) MAX. TYP.(1) MAX.
SYM.
PARAMETER
NOTE
UNIT
32K word Block
4K word Block
2
2
44.6
45.9
1.46
0.19
1.14
0.38
17.7
26.1
0.58
0.11
0.61
0.32
12.6
24.5
0.42
0.11
0.51
0.31
µS
µS
S
Word/Byte Write
Time
tWHQV1
tEHQV1
32K word Block 2, 4
Block Write Time
4K word Block
32K word Block
4K word Block
2, 4
2
S
S
tWHQV2
tEHQV2
Block Erase Time
2
S
tWHRH1
tEHRH1
tWHRH2
tEHRH2
Word/Byte Write Suspend Latency
Time to Read
7
8
6
8
6
7
µS
µS
Erase Suspend Latency Time to
Read
18
22
11
14
11
14
Note: See 5V VDD Block Erase and Word/Byte Write Performance for Notes 1 through 4.
VDD = 3.3V ±0.3V, TA = 0 ° C to +70° C
VPP = 2.7V − 3.6V VPP = 4.5V − 5.5V VPP = 11.4V − 12.6V
Typ.(1) Max. Typ.(1) Max. Typ.(1) Max.
SYM.
PARAMETER
NOTE
UNIT
32K word Block
4K word Block
2
2
44
17.3
25.6
0.57
0.11
0.59
0.31
12.3
24
µS
µS
S
Word/Byte Write
Time
45
tWHQV1
tEHQV1
32K word Block 2, 4
1.44
0.19
1.11
0.37
0.41
0.1
0.5
Block Write Time
4K word Block
32K word Block
4K word Block
2, 4
2
S
S
tWHQV2
tEHQV2
Block Erase Time
2
0.3
S
tWHRH1
tEHRH1
tWHRH2
tEHRH2
Word/Byte Write Suspend Latency
Time to Read
6
7
5
7
5
6
µS
µS
Erase Suspend Latency Time to
Read
16.2
20
9.6
12
9.6
12
Note: See 5V VDD Block Erase and Word/Byte Write Performance for Notes 1 through 4.
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