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W29C011A-15 参数 Datasheet PDF下载

W29C011A-15图片预览
型号: W29C011A-15
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8 CMOS FLASH MEMORY [128K X 8 CMOS FLASH MEMORY]
分类和应用:
文件页数/大小: 19 页 / 153 K
品牌: WINBOND [ WINBOND ]
 浏览型号W29C011A-15的Datasheet PDF文件第5页浏览型号W29C011A-15的Datasheet PDF文件第6页浏览型号W29C011A-15的Datasheet PDF文件第7页浏览型号W29C011A-15的Datasheet PDF文件第8页浏览型号W29C011A-15的Datasheet PDF文件第10页浏览型号W29C011A-15的Datasheet PDF文件第11页浏览型号W29C011A-15的Datasheet PDF文件第12页浏览型号W29C011A-15的Datasheet PDF文件第13页  
Preliminary W29C011A
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
Power Supply Voltage to V
ss
Potential
Operating Temperature
Storage Temperature
D.C. Voltage on Any Pin to Ground Potential except OE
Transient Voltage (
¡Õ
20 nS ) on Any Pin to Ground Potential
Voltage on OE Pin to Ground Potential
RATING
-0.5 to +7.0
0 to +70
-65 to +150
-0.5 to V
DD
+1.0
-1.0 to V
DD
+1.0
-0.5 to 12.5
UNIT
V
°C
°C
V
V
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(V
DD
= 5.0V
±10%,
V
SS
= 0V, T
A
= 0 to 70° C)
PARAMETER
Power Supply
Current
SYM.
I
CC
TEST CONDITIONS
MIN.
CE = OE = V
IL
, WE = V
IH
,
all I/Os open
Address inputs = V
IL
/V
IH
,
at f = 5 MHz
CE = V
IH
, all I/Os open
Other inputs = V
IL
/V
IH
CE = V
DD
-0.3V, all I/Os open
Other inputs = V
DD
-0.3V/GND
V
IN
= GND to V
DD
V
IN
= GND to V
DD
-
-
I
OL
= 2.1 mA
I
OH
= -0.4 mA
-
LIMITS
TYP.
-
MAX.
50
UNIT
mA
Standby V
DD
Current (TTL input)
Standby V
DD
Current
(CMOS input)
Input Leakage
Current
Output Leakage
Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
I
SB
1
I
SB
2
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
-
-
-
-
-0.3
2.0
-
2.4
2
20
-
-
-
-
-
-
3
100
1
10
0.8
V
DD
+0.5
0.45
-
mA
µA
µA
µA
V
V
V
V
Power-up Timing
PARAMETER
Power-up to Read Operation
Power-up to Write Operation
SYMBOL
T
PU
.READ
T
PU
.WRITE
TYPICAL
100
5
UNIT
µS
mS
-9-
Publication Release Date: December 1997
Revision A1