欢迎访问ic37.com |
会员登录 免费注册
发布采购

W39L020P-70B 参数 Datasheet PDF下载

W39L020P-70B图片预览
型号: W39L020P-70B
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8 CMOS FLASH MEMORY [128K X 8 CMOS FLASH MEMORY]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 19 页 / 239 K
品牌: WINBOND [ WINBOND ]
 浏览型号W39L020P-70B的Datasheet PDF文件第2页浏览型号W39L020P-70B的Datasheet PDF文件第3页浏览型号W39L020P-70B的Datasheet PDF文件第4页浏览型号W39L020P-70B的Datasheet PDF文件第5页浏览型号W39L020P-70B的Datasheet PDF文件第6页浏览型号W39L020P-70B的Datasheet PDF文件第7页浏览型号W39L020P-70B的Datasheet PDF文件第8页浏览型号W39L020P-70B的Datasheet PDF文件第9页  
W29EE012
128K
×
8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K
×
8 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is
not required. The unique cell architecture of the W29EE012 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory products).
The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations
Fast page-write operations
128 bytes per page
Page program cycle: 10 mS (max.)
Effective byte-program cycle time: 39
µS
Optional software-protected data write
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20
µA
(typ.)
Automatic program timing with internal V
PP
generation
End of program detection
Toggle bit
Data polling
Fast chip-erase operation: 50 mS
Page program/erase cycles: 1,000
Ten-year data retention
Software and hardware data protection
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
-1-
Publication Release Date: March 26, 2002
Revision A3