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W9864G2GH-6 参数 Datasheet PDF下载

W9864G2GH-6图片预览
型号: W9864G2GH-6
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×4银行X 32位SDRAM [512K X 4 BANKS X 32BITS SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 46 页 / 1317 K
品牌: WINBOND [ WINBOND ]
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W9864G2GH
11.15 Auto-precharge Timing (Write Cycle)
0
1
2
3
4
5
6
7
8
9
10
11
12
CLK
(1) CAS Latency = 2
(a) burst length = 1
Command
Write
tWR
AP
tRP
Act
DQ
(b) burst length = 2
Command
D0
Write
tWR
AP
tRP
Act
DQ
(c) burst length = 4
Command
D0
Write
D1
AP
tWR
tRP
Act
DQ
(d) burst length = 8
Command
D0
Write
D1
D2
D3
AP
tWR
tRP
Act
DQ
(2) CAS Latency = 3
(a) burst length = 1
Command
D0
D1
D2
D3
D4
D5
D6
D7
Write
tWR
AP
tRP
Act
DQ
(b) burst length = 2
Command
D0
Write
tWR
AP
tRP
Act
DQ
(c) burst length = 4
Command
D0
Write
D1
AP
tWR
tRP
Act
DQ
(d) burst length = 8
Command
D0
Write
D1
D2
D3
AP
tWR
tRP
Act
DQ
D0
D1
D2
D3
D4
D5
D6
D7
Note )
Write
AP
Act
represents the Write with Auto precharge command.
represents the start of internal precharing.
represents the Bank Active command.
When the /auto precharge command is asserted,the period from Bank Activate
command to the start of intermal precgarging must be at least tRAS (min).
- 39 -
Publication Release Date:Aug. 13, 2007
Revision A09