MJE13003
FEATURES
Power dissipation
P
CM
: 1.25
NPN SILICON TRANSISTOR
TO 126
W
Tamb=25
1.BASE
2.COLLECTOR
3.EMITTER
Collector current
1.5 A
I
CM
:
Collector-base voltage
V
(BR)CBO
: 700 V
123
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Tamb=25
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
H
FE
1
unless otherwise specified
Test
Ic= 1000
Ic= 10
I
E
= 1000
V
CB
= 700
V
CE
= 400
V
EB
= 9
conditions
A
mA
A
V
V
V
I
E
=0
I
B
=0
I
C
=0
I
E
=0
I
B
=0
I
C
=0
8
5
1
1.2
3
5
0.5
2.5
V
V
V
MHz
µs
µs
MIN
700
400
9
1000
500
1000
40
TYP
MAX
UNIT
V
V
V
µA
µA
µA
V
CE
= 10 V, I
C
= 150 mA
V
CE
= 10 V, I
C
= 0.5 mA
I
C
=1000mA,I
B
= 250 mA
I
C
=1000mA, I
B
= 250mA
I
E
= 2000 mA
V
CE
=10V,Ic=100mA
f =1MHz
I
C
=1A,
I
B1
=-I
B2
=0.2A
DC current gain(note)
H
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Fall time
Storage time
2
V
CE
(sat)
V
BE
(sat)
V
BE
f
T
t
f
t
s
V
CC
=100V
CLASSIFICATION OF H
FE(1)
Rank
Range
8-15
15-20
20-25
25-30
30-35
35-40
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
WINGS [ WING SHING COMPUTER COMPONENTS ]
