2SC1047
GENERAL DESCRIPTION
Silicon Epitaxial Planar Transistor
High frequency, high power transistors in a plastic
envelope, primarily for use in audio and general
purpose
QUICK REFERENCE DATA
SYMBOL
MT-100
CONDITIONS
V
BE
= 0V
TYP
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
T
mb
25
I
C
= 4.0A; I
B
= 0.4A
I
F
= 4.0A
I
C
=4.0A,I
B1
=-I
B2
=0.4A,V
CC
=60V
-
-
-
-
-
-
1.5
0.35
MAX
160
140
12
100
3
2.0
1.0
UNIT
V
V
A
A
W
V
V
s
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
MIN
-
-
-
-
-
-55
-
Tmb 25
MAX
160
140
6
12
3
100
150
150
UNIT
V
V
V
A
A
W
ELECTRICAL CHARACTERISTICS
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
f
T
C
c
t
on
t
s
t
f
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
V
CB
=160V
V
EB
=5V
I
C
=1mA
I
C
= 4.0A; I
B
= 0.4A
I
C
= 1A; V
CE
= 5V
I
C
= 1A; V
CE
= 12V
V
CB
= 10V,f=1MHZ
I
C
=4A,I
B1
=-I
B2
=0.4A,V
CC
=60V
I
C
=4A,I
B1
=-I
B2
=0.4A,V
CC
=60V
I
C
=4A,I
B1
=-I
B2
=0.4A,V
CC
=60V
TYP
-
-
-
50
5
210
MAX
0.2
0.2
140
2
200
-
-
UNIT
mA
mA
V
V
MHz
pF
us
us
us
0.35
1.0
Wing Shing Computer Components Co., (H.K .)L td.
Homepage:
http: / / www.wingshing.com
Tel: (852)234 1 92 76
E-mail: wsccltd@hk
Fax : (852)279 7 8153
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