2SD288
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
*
TO-220
ABSOLUTE MAXIMUM RATINGS (T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation (Tc=25
o
C
)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
Tstg
Rating
80
55
5
3
20
150
-50~150
Unit
V
V
V
A
W
C
C
o
o
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C)
Characteristic
Collector Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
Symbol
I
CBO
h
FE1
V
CE(sat)
Test Condition
V
CB
= 50V , I
E
=0
V
CE
= 5V , I
C
=0.5A
I
C
=1A ,
I
B
=0.1A
40
Min
Typ
Max
50
240
1.0
Unit
µ
A
V
Wing Shing Computer Components Co., (H.K)Ltd.
Homepage:
http:/ /www.wingshing.com
TeL(852)2341 9276 Fax:(852)2797 8153
.
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