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BU406 参数 Datasheet PDF下载

BU406图片预览
型号: BU406
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延硅晶体管(高电压切换使用在水平偏转输出级) [NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE)]
分类和应用: 晶体晶体管开关输出元件高压
文件页数/大小: 1 页 / 27 K
品牌: WINGS [ WING SHING COMPUTER COMPONENTS ]
   
BU406/406H/408
NPN
EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING USE IN
HORIZONTAL DEFLECTION OUTPUT STAGE
TO-220
ABSOLUTE MAXIMUM RATINGS (T
a
=25°C)
C
Characteristic
Collector-Base Voltage
Collector-EmitterVoltage
Emitter-Base voltage
Collector Current (DC)
Collector Peck Current
Base Current (DC)
Collector Dissipation (Tc=25
°C
)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
Tstg
Rating
400
200
6
7
10
4
60
150
-65~150
Unit
V
V
V
A
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
C
Characterristic
Collector Cutoff Current (V
BE
=0)
Symbol
I
CES
Test Condition
V
CE
= 400V , V
EB
=
0
V
CE
= 250V , V
EB
=
0
V
CE
= 250V , V
EB
=
0
Tc=150
V
EB
= 6V ,
I
C
=
0
I
C
=5A,
I
B
=0.5A
I
C
=5A,
I
B
=0.8A
I
B
=1.2A
I
C
=6A,
I
C
=5A,
I
B
=0.5A
I
C
=5A,
I
B
=0.8A
I
C
=6A,
I
B
=1.2A
V
CE
= 10V ,
I
C
=500mA
I
C
=5A,
I
B
=0.5A
I
C
=5A,
I
B
=0.8A
I
C
=6A,
I
B
=1.2A
Min
Typ
Max
5
100
1
1
1
1
1
1.2
1.2
1.5
Unit
mA
µ
A
mA
mA
V
V
V
V
V
V
Emitter Cutoff Current(I
C
=0)
Collector Emitter Saturation Voltage :BU406
:BU406H
:BU408
Base- Emitter Saturation Voltage
:BU406
:BU406H
:BU408
Current Gain Bandwith Product
Turn-Off Time
:BU406
:BU406H
:BU408
I
EBO
V
CE(sat)
V
BE(sat)
f
T
t
off
10
0.75
0.4
0.4
MHZ
µ
S
µ
S
µ
S
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com