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MJE13005B 参数 Datasheet PDF下载

MJE13005B图片预览
型号: MJE13005B
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管(电子变压器,电源SWICHING CIRCUIT ) [NPN SILICON TRANSISTOR(ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT)]
分类和应用: 变压器晶体晶体管电子
文件页数/大小: 1 页 / 90 K
品牌: WINGS [ WING SHING COMPUTER COMPONENTS ]
   
MJE13005B
ELECTRONIC TRANSFORMERS ,
POWER SWICHING CIRCUIT
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( T =25
C
)
A
o
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
o
Tamb=25 C
Tcase=25
o
C
SYMBOL
V
CBO
RATING
UNIT
V
V
V
A
V
CEO
V
EBO
Ic
700
400
9
4
1.5
Ptot
Tj
Tstg
75
W
Junction Temperature
Storage Temperature Range
150
-55~+150
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C
)
CHARACTERISTIC
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut off current
Collector-Emitter Cut off Current
Emitter-Base Cut off Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-emitter Voltage
SYMBOL
V(BR)CEO
TEST CONDITION
Ic=1m A, I
B
=0
I
E
=0 , Ic=1m A
I
E
=1mA, I
C
=0
V
CB
=700V, I
E
=0
V
CE
=400V, I
B
=0
V
EB
=9V, Ic=0
V
CE
=
5V, Ic=1A
Ic=1A, I
B
=0.25A
I
E
=
1A
2
Ic=
1A, I
B
=0.25A
IB1=-IB2=0.4A
MIN. MAX. UNIT
V
400
-
700
9
-
-
V
V
A
A
A
V
(BR)CBO
V
(BR) EBO
I
CBO
I
CEO
I
EBO
hFE
V
CE
(sat)
V
BE
-
10
00
-
1000
-
10
1000
40
1.0
1.25
-
V
V
V
-
_
_
_
Base-Emitter Saturation Voltage
Fall Time
Storage Time
Freqency Characteristics
V
BE
(sat)
Ic=2A
t
f
ts
f
T
1.2
0
.9
S
S
MHz
Ic=2A
I
B1
=- I
B2
=0.4A
5
-
-
4
V
CE
=10V, I
C
=0.5A, f=1MHz
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com