PNP EPITAXIAL SILICON TRANSISTORS
High Voltage Transistor
SOT
—
—23
WMBT3906
!
!
Power Dissipation: 225mW
Collector Current: Max.
0.2A
1. BASE
2. EMITTER
3. COLLECTOR
GUARANTEED PROBED CHARACTERISTICS (T
A
=25℃)
℃
Limits
Characteristic
Symbol
Test Conditions
Units
MIN.
40
40
5.0
50
60
80
100
60
30
650
MAX.
Collector-emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-off
Current
BV
CEO
BV
CBO
BV
EBO
I
CEX
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
BV
ESAT1
BV
ESAT2
V
CE(SAT)1
V
CE(SAT)2
f
T
I
C
=1mA
I
C
=100µA
I
E
=10µA
V
CE
=30V, V
BE
=3V
V
CE
=1V, I
C
=100µA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=100mA
I
C
=10mA, I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10, V
CE
=20V f=100MHz
V
V
V
nA
DC Current Gain
300
850
mV
Base-Emitter
Saturation Voltage
950
mV
250
mV
Collector-Emitter
Saturation Voltage
400
mV
Transition Frequency
250
MHz
Collector-Base
C
OB
V
CB
=5V, f=1MHz
4.5
PF
Capacitance
NOTES:
Due to probe testing limitations, only the DC parameters are tested.
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
WINGS [ WING SHING COMPUTER COMPONENTS ]
