WMBT5401LT1
PNP Silicon
Transistor
1
BASE
2
EMITTER
1
COLLECTOR
3
3
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
–150
–160
–5.0
–500
Unit
Vdc
Vdc
2
SOT– 23 (TO – 236AB)
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
Unit
mW
mW/°C
°C/W
mW
mW/°C
R
q
JA
TJ, Tstg
– 55 to +150
°C/W
°C
DEVICE MARKING
W
MBT5401LT1 = 2L
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –100
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = –120 Vdc, IE = 0)
(VCB = –120 Vdc, IE = 0, TA = 100°C)
V(BR)CEO
–150
V(BR)CBO
–160
V(BR)EBO
–5.0
I
CB0
—
—
–50
–50
nAdc
µAdc
—
—
Vdc
—
Vdc
Vdc
Wing Shing Computer Components Co., (H.K .)L td.
Homepage:
http: / / www.wingshing.com
Tel: (8 52) 2341 9 27 6 Fax : (8 52) 27 9 7 8 153
E-mail: wsccltd@ hk star.com
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
WINGS [ WING SHING COMPUTER COMPONENTS ]
