WMBT5551LT1
NPN Silicon
Transistor
1
BASE
2
EMITTER
Symbol
VCEO
VCBO
VEBO
IC
Value
160
180
COLLECTOR
3
3
1
2
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Unit
Vdc
Vdc
Vdc
mAdc
6.0
600
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
Unit
mW
mW/°C
°C/W
mW
mW/°C
R
q
JA
TJ, Tstg
– 55 to +150
°C/W
°C
DEVICE MARKING
MMBT5550LT1 = M1F; MMBT5551LT1 = G1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
(VEB = .0 Vdc, IC = 0)
5
IEBO
—
50
V(BR)CEO
160
V(BR)CBO
180
V(BR)EBO
6.0
ICBO
—
—
—
—
nAdc
50
µAdc
50
nAdc
—
—
—
Vdc
—
—
Vdc
Vdc
Wing Shing Computer Components Co., (H.K .)L td.
Homepage:
http: / / www.wingshing.com
Tel: (8 52) 2341 9 27 6 Fax : (8 52) 27 9 7 8 153
E-mail: wsccltd@ hk star.com
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1