NPN EPITAXIAL SILICON TRANSISTORS
High Voltage Transistor
Die Size 0.6*0.6mm
Power Dissipation: 225mW
Collector Current: Max. 500mA
Bonding Pad Size
Emitoe 100*100mkm
Base 100*100mkm
WMBTA42
SOT
—
—23
*
*
*
*
1. BASE
2. EMITTER
3. COLLECTOR
GUARANTEED PROBED CHARACTERISTICS (T
A
=25
℃
)
Characteristic
Collector-emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cut-off
Current
Emitter Cut-off
Current
DC Current Gain
Base-Emitter
Saturation Voltage
Collector-Emitter
Saturation Voltage
Transition
Frequency
Collector-Base
Capacitance
Symbol
V
CEO
V
CBO
I
CBO
I
EBO
h
FE
Test Conditions
I
C
=1.0mA
I
C
=100uA
V
CB
=260V
V
EB
=6V
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
I
C
=20mA, I
b
=2mA
I
C
=20mA, I
B
=2mA
V
CE
=20V,
I
C
=10mA,f=10MHz
V
CB
=20V, f=1MHz
Limits
Min Typ Max
300
-
-
Units
V
300
-
-
30
40
40
-
-
50
-
-
-
-
-
100
100
-
V
nA
nA
-
V
BEsat
V
CEsat
f
r
C
cb
-
-
-
-
0.90
V
V
MHz
pF
0.35
-
3.0
NOTES:
Due to probe testing limitations, only the DC parameters are tested.
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
WINGS [ WING SHING COMPUTER COMPONENTS ]
