RoHS
1N4150
High-speed switching diode
Features
1. High reliability
2. High forward current capability
Applications
High speed switch and general purpose use
in computer and industrial applications
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
T
j
=25℃
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Power dissipation
Peak forward surge current
Average forward current
Junction temperature
Test Conditions
Storage temperature range
Maximum Thermal Resistance
T
j
=25℃
W
Junction ambient
J
E
E
C
E
L
V
R
=0
t
p
=1μs
R
T
O
N
C
I
Symbol
V
RRM
V
R
I
FSM
I
F
I
FAV
P
V
T
j
T
stg
C
O
L
,
.
D
T
Type
Value
50
40
4
600
300
500
175
-65~+175
Unit
V
V
A
mA
mA
mW
℃
℃
Parameter
Test Conditions
on PC board 50mm×50mm×1.6mm
Symbol
R
thJA
Value
500
Unit
K/W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
