RoHS
1N914
Fast switching diode
Features
1. High reliability
2. High conductance
3. Fast switching speed (t
rr
≤4
ns)
Applications
For general purpose switching applications
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
T
j
=25℃
Parameter
Non repetitive peak reverse voltage
Repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Forward current
Average rectified current
Non repetitive peak forward surge
current
Power dissipation
W
Storage temperature range
J
E
E
C
E
L
R
T
O
N
C
I
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
F
I
FAV
I
FSM
I
FSM
P
d
T
stg
C
O
L
,
.
D
T
Test Conditions
Value
100
75
75
75
53
300
200
1
4
500
-65~+175
Unit
V
V
V
V
V
mA
mA
A
A
mW
℃
Half wave rectification with
resistive load and f>50MHz
t=1s
t=1µs
I=4mm T
L
=25℃
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Http:// www.wej.cn
E-mail:wej@yongerjia.com
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