RoHS
1SS133
High-speed switching diode
Features
1. Glass sealed envelope.
2. High reliability.
3. High speed.
Applications
High speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
T
a
=25℃
Parameter
Peak reverse voltage
DC reverse voltage
Peak forward current
Symbol
V
RM
I
FM
I
o
V
R
Limits
90
80
Mean rectifying current
Electrical Characteristics
T
a
=25℃
Forward voltage
Reverse current
W
Capacitance between terminals
Reverse recovery time
J
E
Parameter
E
C
E
L
V
F
I
R
C
T
t
rr
400
130
R
T
Unit
V
V
mA
mA
Min.
-
-
-
-
O
Typ.
0.92
0.02
1.55
1.5
N
C
I
C
P
T
j
T
stg
O
L
,
.
D
T
Parameter
Surge current(1s)
Power dissipation
Junction temperature
Storage temperature
Symbol
I
surge
Value
600
300
175
-65~+175
Unit
mA
mW
℃
℃
Symbol
Max.
1.2
0.5
2
4
Unit
V
μA
pF
ns
Conditions
I
F
=100mA
V
R
=80V
V
R
=0.5V,f=1MHz
V
R
=6V,I
F
=10mA,R
L
=50
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