RoHS
1SS196 SWITCHING DIODE
SOT-23 Plastic-Encapsulate DIODE
Features
Power dissipation
P
D
: 150 mW (Tamb=25 C)
Forward Current
I
F
: 100 mA
Reverse Voltage
V
R
: 80V
Operating and storage junction temperature range
T
j
, T
stg
: -55 C to +150 C
o
o
o
1
1.
Marking:G3
ELECTRICAL CHARACTERISTICS
(Ta=25 C unless otherwise specified)
o
Parameter
Reverse breakdown voltage
Reverse Voltage leakage current
Forward Voltage
W
Diode Capacitance
Reverse Recovery Time
J
E
E
C
E
L
R
T
V
(BR)
I
R
V
F
C
tot
t
rr
O
N
C
I
2.9
1.9
C
2.4
1.3
O
0.4
L
,
.
3
2
Unit:mm
SOT-23
D
T
Symbol
Test Condition
I
R
=100 A
V
R
=80V
I
F
=100mA
V
R
=0V
f=1MHz
0.95
0.95
MIN.
80
MAX.
Unit
V
0.5
1.2
4
4
A
V
pF
nS
I
F
=I
R
=10mA
I
rr
=0.1I
R
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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