RoHS
2N5172
2N5172
FEATURES
Power dissipation
TRANSISTOR (NPN)
TO—92
1. EMITTER
P
CM
: 0.625 W (Tamb=25℃)
Collector current
I
CM
: 0.5
A
Collector-base voltage
V
(BR)CBO
: 25 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
W
J
E
E
C
E
L
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
R
T
Test
Ic= 10
µA
, I
E
=0
O
N
C
I
25
25
5
C
1 2 3
O
L
,
.
D
T
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic= 10 mA, I
B
=0
I
E
= 10
µ
A, I
C
=0
V
CB
= 25V, I
E
=0
V
EB
= 5 V, I
C
=0
V
CE
= 10V, I
C
= 10mA
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
100
0.1
0.1
500
0.25
1.2
µ
A
µ
A
V
CE
(sat)
V
BE
(sat)
V
V
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