RoHS
2N6517
2N6517
TRANSISTOR (NPN)
TO-92
FEATURES
Power dissipation
P
CM
: 625
mW (Tamb=25℃)
1.
EMITTER
2.
BASE
Collector current
I
CM
: 500
mA
Collector-base voltage
V
(BR)CBO
: 350
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
3.
COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
DC current gain
Collector-emitter saturation voltage
W
Base-emitter saturation voltage
J
E
E
C
E
L
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
R
T
O
Test
Ic=100
µA,
I
E
=0
Ic=1 mA, I
B
=0
N
C
I
C
MIN
O
TYP
L
,
.
MAX
D
T
1 2 3
conditions
UNIT
V
V
V
350
350
6
50
50
20
30
30
20
15
0.3
0.35
0.5
1
0.75
0.85
0.9
40
200
6
I
E
= 10
µA,
I
C
=0
V
CB
=250 V, I
E
=0
V
EB
=5 V, I
C
=0
V
CE
=10 V, I
C
=
1
mA
nA
nA
V
CE
=10 V, I
C
=10 mA
V
CE
=10 V, I
C
=30 mA
V
CE
=10V, I
C
=50 mA
V
CE
=10V, I
C
=100 mA
I
C
=10 mA, I
B
=1 mA
I
C
=20 mA, I
B
=2 mA
I
C
=30 mA, I
B
=3 mA
I
C
=50 mA, I
B
=5 mA
I
C
=10 mA, I
B
=1 mA
I
C
=20 mA, I
B
=2 mA
I
C
=30 mA, I
B
=3 mA
V
CE
= 20V, I
C
=10 mA
V
CE
=10 V, I
C
=100 mA
V
CB
=20 V, I
E
=0, f=1 MHz
200
200
V
V
V
V
V
V
V
h
FE(5)
V
CE(sat)(1)
V
CE(sat)(2)
V
CE(sat)(3)
V
CE(sat)(4)
V
BE(sat)(1)
V
BE(sat)(2)
V
BE(sat)(3)
V
BE
Base-emitter voltage
Transition frequency
Collector output capacitance
f
T
C
ob
MHz
pF
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