RoHS
2N6520
2N6520
FEATURES
Power dissipation
TRANSISTOR (PNP)
TO-92
1. EMITTER
P
CM
: 0.625
W (Tamb=25℃)
2. BASE
Collector current
I
CM
: -0.5
A
Collector-base voltage
V
(BR)CBO
: -350
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
unless otherwise specified)
Test
conditions
MIN
-350
-350
-5
-0.05
-0.05
20
30
30
20
15
TYP
MAX
UNIT
V
V
V
µA
µA
V(BR)
CBO
V(BR)
CEO
DC current gain
W
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
J
E
E
C
E
L
V(BR)
EBO
I
CBO
I
EBO
R
T
*
Ic= -100
µA
, I
E
=0
I
C
= -1 mA , I
B
=0
O
N
C
I
C
1 2 3
O
L
,
.
D
T
I
E
= -10
µA,
I
C
=0
V
CB
= -250 V , I
E
=0
V
EB
= -4 V , I
C
=0
V
CE
=-10 V, I
C
= -1 mA
V
CE
=-10 V, I
C
= -10 mA
V
CE
=-10 V, I
C
= -30 mA
V
CE
=-10 V, I
C
= -50 mA
V
CE
=-10 V, I
C
= -100 mA
I
C
= -10 mA, I
B
= -1 mA
I
C
= -20 mA, I
B
= -2 mA
I
C
= -30 mA, I
B
= -3 mA
I
C
= -50 mA, I
B
= -5 mA
I
C
= -10 mA, I
B
= -1 mA
I
C
= -20 mA, I
B
= -2 mA
I
C
= -30 mA, I
B
= -3 mA
V
CE
=-10V, I
C
= -100 mA
V
CE
=-20 V, I
C
= -10 mA
f =20 MHz
40
h
FE
200
200
-0.3
-0.35
-0.5
-1
-0.75
-0.85
-0.9
-2
200
V
CE(sat)
V
V
BE(sat)
V
BE(on)
V
V
MHz
f
T
*
* Pulse test, Pulse width≤300µs, Duty cycle≤2%.
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
