RoHS
2N7002T
2N7002T
FEATURES
Power dissipation
MOSFET
( N-Channel )
SOT-523
1. GATE
P
D:
0.15 W (Tamb=25℃)
Collector current
I
D:
115 mA
Collector-base voltage
60 V
V
DS
:
Operating and storage junction temperature range
T
J,
T
stg:
-55℃ to +150℃
Marking: 72
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage*
Gate-body Leakage*
*
Symbol
V
(BR)DSS
V
th(GS)
l
GSS
2. SOURCE
3. DRAIN
unless
Test
Zero Gate Voltage Drain Current *
On-state Drain Current
*
Drain-Source On-Resistance *
Forward Tran conductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
W
SWITCHING
Turn-on Time
Turn-off Time
J
E
E
C
E
L
*
I
DSS
R
T
V
GS
=0V,I
D
=10µA
V
DS
=V
GS
, I
D
=250µA
V
DS
=0V, V
GS
=±20V
O
conditions
N
otherwise
C
I
C
60
1
O
L
,
.
MAX
D
T
specified)
MIN
TYP
UNIT
V
nA
2
±10
1
V
DS
=60V, V
GS
=0V
V
DS
=60V,V
GS
=0V,T
j
=125
℃
V
GS
=10V, V
DS
=7.5V
V
GS
=5V, I
D
=50mA
V
GS
=10V, I
D
=500mA
V
DS
=10V, I
D
=200mA
V
DS
=25V, V
GS
=0V
f=1MHz
80
22
11
2
500
1000
3.2
4.4
µA
500
mA
7.5
13.5
Ω
ms
50
25
5
pF
I
D(ON)
R
DS(0n)
g
FS
C
iSS
C
OSS
C
rSS
T
D(ON)
T
D(OFF)
V
DD
=30V,R
L
=150
I
D
=200mA,V
GEN
=10V
R
GEN
=25Ω
7
11
20
ns
20
*
Pulse test.
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Http:// www.wej.cn
E-mail:wej@yongerjia.com
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