RoHS
2SA1162
PNP EPITAXIAL SILICON TRANSISTOR
SOT-23
LOW FREQRENCY,LOW NOISE AMPLIFIER
3
Complemen
to 2SC2712
Collector-current:Ic=-100mA
Collector-Emiller Voltage:V
CE
=-45 V
1.
1
2
2.4
1.3
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Ta=25 C*
Junction Temperature
Storage Temperature
o
Symbol
V
CBO
V
CEO
Electrical Characteristics
Parameter
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector -Base Cutoff Current
Collector-Emitter Breakdown Voltage#
W
J
E
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
E
C
E
L
R
T
V
EBO
Ic
T
j
P
D
T
stg
O
N
-50
-50
600
C
I
Rating
-50
-45
-5
-100
225
150
V
V
V
nA
nA
V
V
V
PF
dB
C
O
0.4
1.BASE
2.EMITTER
3.COLLECTOR
2.9
1.9
0.95
0.95
L
,
.
o
D
T
Unit:mm
(Ta=25 C)
Unit
V
V
V
mA
mW
O
O
-55~150
C
C
(Ta=25 C)
o
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
C
ob
f
T
NF
MIN. TYP. MAX. Unit
-50
-45
-5
Condition
I
C
=-100 A I
E
=0
I
C
=-1mA I
B
=0
I
E
=-100 A I
C
=0
V
CB
=-50V, V
C
=0
V
CB
=-5V, I
C
=0
V
CE
=-5V, I
C
=1mA
I
C
=-100mA, I
B
=-5mA
I
C
=-100mA, I
B
=-5mA
V
C
e
=-5V, I
C
=-2mA
V
CB
=-10V, I
E
=0 f=1MHz
V
CE
=-5V I
C
=-0.2mA
f=1MHz Rs=1Kohm
60
200
-0.20 -0.7
-0.82 100
-0.6 -0.67 -0.75
4.5
100 190
0.7
10
7
MHz V
CE
=-5V I
C
=-10mA
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate
25 C
#
Pulse Test: Pulse Width 300uS Duty cycle 2%
DEVICE MARKING:
2SA1162=M6
o
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
