RoHS
2SA1625
2SA1625
FEATURES
Power dissipation
P
CM
TRANSISTOR (PNP)
TO-92
1.
EMITTER
: 750
mW (Tamb=25℃)
2.
COLLECTOR
Collector current
I
CM
: -0.5
A
Collector-base voltage
V
(BR)CBO
: -400
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
3.
BASE
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
W
Turn-on Time
Storage Time
Fall-Time
J
E
E
C
E
L
t
f
I
EBO
R
T
O
Test
conditions
Ic=
-100
µA,
I
E
=0
Ic=
-1
mA, I
B
=0
N
C
I
C
MIN
O
TYP
L
,
.
MAX
D
T
1 2 3
UNIT
V
V
V
-400
-400
-7
-1
-1
40
200
-1
-1.2
10
20
I
E
=
-100
µA,
I
C
=0
V
CB
=
-400
V, I
E
=0
V
EB
=
-5
V, I
C
=0
µA
µA
h
FE(1)
V
CE
=
-5
V, I
C
=
-50
mA
I
C
=
-100
mA, I
B
=
-10
mA
I
C
=
-100
mA, I
B
=
-10
mA
V
CE
=
-10
V, I
C
=
-10
mA
V
CB
=
-10
V, I
E
=0, f=
1
MHz
V
CE(sat)
V
BE(sat)
V
V
MHz
pF
µs
µs
µs
f
T
C
ob
t
on
t
stg
40
1
V
CC
=
-150
V, I
c
=
-100
mA,
I
B!
=I
B2
-10
mA, RL=1.5K
Ω
5
1
CLASSIFICATION OF h
FE(1)
Rank
Range
M
40-80
L
60-120
K
100-200
WEJ ELECTRONIC CO.
Http:// www.wej.cn
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