RoHS
2SA1740
2SA1740
FEATURES
Power dissipation
P
CM
TRANSISTOR (PNP)
SOT-89
1.
BASE
2.
COLLECTOR
1
: 500
mW (Tamb=25℃)
3.
EMITTER
Collector current
I
CM
: -200
mA
Collector-base voltage
V
(BR)CBO
: -400
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-ON Time
W
Turn-OFF Time
J
E
E
C
E
L
I
EBO
R
T
O
Test
conditions
Ic=
-10
µA,
I
E
=0
Ic=
-1
mA, I
B
=0
N
C
I
C
MIN
O
3
TYP
2
L
,
.
MAX
D
T
UNIT
V
V
V
-400
-400
-5
-0.1
-0.1
60
200
-0.8
-1
70
5
0.25
5
I
E
=
-10
µA,
I
C
=0
V
CB
=
-300
V, I
E
=0
V
EB
=
-4
V, I
C
=0
µA
µA
h
FE(1)
V
CE
=
-10
V, I
C
=
-50
mA
I
C
=
-50
mA, I
B
=
-5
mA
I
C
=
-50
mA, I
B
=
-5
mA
V
CE
=
-30
V, I
C
=
-10
mA
V
CB
=
-30
V, I
E
=0, f=
1
MHz
V
CC
=-
150
V, I
c
=-
50
mA,
I
B1
=-I
B2
=-5
mA
V
CE(sat)
V
BE(sat)
V
V
MHz
pF
µs
µs
f
T
C
ob
t
on
t
off
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
D
60-120
AK
E
100-200
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Http:// www.wej.cn
E-mail:wej@yongerjia.com
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