RoHS
2SA1832
2SA1832
FEATURES
Power dissipation
P
CM
SOT-523
TRANSISTOR (PNP)
1.
BASE
2.
EMITTER
3.
COLLECTOR
: 0.1
W (Tamb=25℃)
Collector current
I
CM
: -0.15
A
Collector-base voltage
V
(BR)CBO
: -50
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
W
CLASSIFICATION OF h
FE(1)
Rank
Y
120-240
SY
GR
200-400
SG
Range
Marking
J
E
E
C
E
L
R
T
O
Test
conditions
I
C
=-100µA, I
E
=0
I
C
=-1mA, I
B
=0
N
C
I
C
MIN
O
TYP
L
,
.
MAX
D
T
UNIT
V
V
V
-50
-50
-5
-0.1
-0.1
120
400
-0.3
80
7
I
E
=-100µA, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
µ
A
µ
A
I
EBO
h
FE(1)
V
CE
=-6V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE(sat)
V
MHz
pF
f
T
C
ob
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