RoHS
2SA836
2SA836
FEATURES
TRANSISTOR (PNP)
TO-92
Power dissipation
1. EMITTER
P
CM
: 0.2
W (Tamb=25℃)
2. COLLECTOR
Collector current
I
CM
: -0.1
A
Collector-base voltage
V
(BR)CBO
: -55
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test
3. BASE
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
W
Output capacitance
Noise figure
J
E
E
C
E
L
I
EBO
h
FE
R
T
Ic= -10µA , I
E
=0
I
C
= -1 mA , I
B
=0
I
E
= -10µA, I
C
=0
O
conditions
N
I
C
=0
C
I
-5
C
O
1 2 3
L
,
.
V
V
V
D
T
MIN
-55
-55
TYP
MAX
UNIT
V
CB
=-18V, I
E
=0
-0.1
-0.05
160
500
-0.5
-0.75
150
µA
µA
V
EB
= -2V ,
V
CE
=-12 V, I
C
= -2mA
I
C
= -10mA, I
B
= -1mA
V
CE
=-12 V, I
C
= -2mA
V
CE
=-12 V, I
C
= -2mA
V
CEsat
V
V
MHz
V
BE
(ON)
f
T
C
ob
V
CE
=-10V, I
E
=0,f=1 MHz
V
CE
=-6V, I
C
=0.1 mA,
f=1 0Hz, R
G
=10KΩ
V
CE
=-6V, I
C
=0.1 mA,
f=1 kHz, R
G
=10KΩ
4
5
pF
NF
dB
1
CLASSIFICATION OF
h
FE
Rank
Range
C
160-320
D
250-500
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