RoHS
2SA844
2SA844
FEATURES
Power dissipation
TRANSISTOR (PNP)
TO-92
1. EMITTER
P
CM
: 0.3 W (Tamb=25℃)
Collector current
I
CM:
-0.1 A
Collector-base voltage
V
(BR)CBO
: -55 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
Collector-emitter saturation voltage
Base-emitter
voltage
W
Transition frequency
CLASSIFICATION OF h
FE
Rank
Range
C
160-320
D
250-500
E
400-800
J
E
E
C
E
L
R
T
Test
Ic= -10µA , I
E
=0
O
conditions
N
I
C
=0
C
I
-5
C
1 2 3
O
L
,
.
D
T
MIN
-55
-55
TYP
MAX
UNIT
V
V
V
I
C
= -1mA , I
B
=0
I
E
= -10µA, I
C
=0
V
CB
= -18V , I
E
=0
V
EB
= -2 V ,
-0.1
-0.05
160
800
-0.5
-0.75
150
µA
µA
V
CE
=-12V, I
C
= -2mA
I
C
= -10mA, I
B
= -1 mA
V
CE
= -12V, I
C
= -2mA
V
CE
=-12V, I
C
= -2mA
V
CE(sat)
V
BE(on)
V
V
MHz
f
T
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