RoHS
2SB1218A
2SB1218A
FEATURES
Power dissipation
P
CM
:
SOT-323
TRANSISTOR (PNP)
1.
BASE
2.
EMITTER
3.
COLLECTOR
1. 25¡ À0. 05
150
mW (Tamb=25℃)
Collector current
I
CM
:
-100
mA
Collector-base voltage
V
(BR)CBO
:
-45
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
W
CLASSIFICATION OF h
FE(1)
Rank
Q
160-260
BQ
R
210-340
BR
S
290-460
BS
Range
J
E
E
C
E
L
R
T
O
Test
conditions
Ic=
-10
µA,
I
E
=0
Ic=
-2
mA, I
B
=0
N
C
I
C
1. 30¡ À0. 03
O
2. 30¡ À0. 05
Unit: mm
MIN
TYP
MAX
0. 30
2. 00¡ À0. 05
L
,
.
EF
1. 01 R
D
T
UNIT
V
V
V
-45
-45
-7
-0.1
-0.1
160
460
-0.5
80
2.7
I
E
=
-10
µA,
I
C
=0
V
CB
=
-20
V, I
E
=0
V
EB
=
-6
V, I
C
=0
µA
µA
I
EBO
h
FE(1)
V
CE
=
-10
V, I
C
=
-2
mA
I
C
=
-100
mA, I
B
=
-10
mA
V
CE
=
-10
V, I
C
=
-1
mA , f=200MHz
V
CB
=
-10
V, I
E
=0, f=
1
MHz
V
CE(sat)
V
MHz
pF
f
T
C
ob
Marking
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E-mail:wej@yongerjia.com
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