RoHS
2SB1308
2SB1308
FEATURES
Power dissipation
P
CM
:
Collector current
I
CM
:
Collector-base voltage
V
(BR)CBO
:
TRANSISTOR (PNP)
SOT-89
1. BASE
0.5
-3
-30
W (Tamb=25℃)
A
V
2. COLLECTOR
1
3. EMITTER
2
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
unless otherwise specified)
Collector-emitter saturation voltage
Transition frequency
* Measured using pulse current.
W
CLASSIFICATION OF h
FE
Rank
Range
J
E
E
C
E
L
P
82-180
BFP,BFQ,BFR
R
T
I
CBO
I
EBO
h
FE
*
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
O
N
Test
C
I
C
O
3
-30
-20
-6
L
,
.
MAX
D
T
conditions
MIN
UNIT
V
V
V
Ic=-50µA , I
E
=0
I
C
= -1mA , I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-20 V , I
E
=0
V
EB
=-5 V ,
I
C
=0
-0.5
-0.5
82
390
-0.45
50
µA
µA
V
CE
=-2V, I
C
= -0.5A
I
C
=-1.5A, I
B
= -0.15A
V
CE
= -6V, I
C
=-50mA
f =30MHz
V
CEsat
*
V
MHz
f
T
Q
120-270
R
180-390
Marking
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