RoHS
2SB1424
2SB1424
FEATURES
Power dissipation
P
CM
:
TRANSISTOR (PNP)
SOT-89
1.
BASE
2.
COLLECTOR
1
600
mW (Tamb=25℃)
3.
EMITTER
Collector current
I
CM
:
-3
A
Collector-base voltage
V
(BR)CBO
:
-20
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Test
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
W
CLASSIFICATION OF h
FE(1)
Rank
Q
120-270
AEQ
R
180-390
AER
J
E
E
C
E
L
I
EBO
R
T
O
conditions
Ic=
-50
µA,
I
E
=0
Ic=
-1
mA, I
B
=0
N
C
I
C
MIN
O
3
TYP
2
L
,
.
MAX
D
T
UNIT
V
V
V
-20
-20
-6
-0.1
-0.1
120
390
-0.5
240
35
I
E
=
-50
µA,
I
C
=0
V
CB
=
-20
V, I
E
=0
V
EB
=
-5
V, I
C
=0
µA
µA
h
FE(1)
V
CE
=
-2
V, I
C
=
-100
mA
I
C
=
-2
A, I
B
=
-100
mA
V
CE
=
-2
V, I
C
=
-500
mA, f=100MHz
V
CB
=
-10
V, I
E
=0, f=
1
MHz
V
CE(sat)
V
MHz
pF
f
T
C
ob
Range
Marking
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