RoHS
2SB1658
2SB1658
FEATURES
Power dissipation
P
CM
:
TRANSISTOR (PNP)
TO-126
1
W (Tamb=25℃)
1. EMITTER
2. COLLECTOR
3. BASE
Collector current
I
CM
:
-5
A
Collector-base voltage
V
(BR)CBO
:
-30
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test
unless otherwise specified)
conditions
MIN
TYP
MAX
UNIT
V
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
W
J
E
E
C
E
L
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
R
T
Ic=-
0.1
mA, I
E
=0
Ic=-
1
mA, I
B
=0
O
N
C
I
C
123
O
L
,
.
D
T
-30
-30
-6
-0.1
-0.1
150
50
-0.15
-0.25
-0.5
-1.5
95
100
I
E
=-
0.1m
A, I
C
=0
V
CB
=-
30
V, I
E
=0
V
EB
=-
6
V, I
C
=0
V
CE
=-
2
V, I
C
=-1A
V
CE
=-
2
V, I
C
=-
4
A
µ
A
µ
A
600
I
C
=-
1
A, I
B
=-50mA
I
C
=-2A, I
B
=-100mA
I
C
=-
4
A, I
B
=-200mA
I
C
=-1A, I
B
=-100mA
V
CE
=-
10
V, I
C
=-
50
mA
V
CB
=-
10
V, I
E
=0, f=
1
MHz
V
V
MHz
pF
f
T
C
ob
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