RoHS
2SB562
2SB562
TRANSISTOR (PNP)
TO-92L
FEATURES
Power dissipation
P
CM
:
900
mW (Tamb=25℃)
1.
EMITTER
2.
COLLECTOR
3.
BASE
Collector current
I
CM
:
-1
A
Collector-base voltage
V
(BR)CBO
:
-25
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
W
CLASSIFICATION OF h
FE(1)
Rank
B
85-170
C
120-240
Range
J
E
E
C
E
L
R
T
O
Test
conditions
Ic=
-10
µA,
I
E
=0
Ic=
-1
mA, I
B
=0
N
C
I
C
MIN
O
TYP
L
,
.
MAX
D
T
123
UNIT
V
V
V
-25
-20
-5
-1
-1
85
240
-0.5
-1
350
38
I
E
=
-10
µA,
I
C
=0
V
CB
=
-20
V, I
E
=0
V
EB
=
-4
V, I
C
=0
V
CE
=
-2
V, I
C
=
-0.5
A
µA
µA
I
EBO
h
FE(1)
V
CE(sat)
V
BE
I
C
=
-0.8
A, I
B
=
-0.08
A
V
CE
=
-2
V, I
C
=
-0.5
A
V
CE
=
-2
V, I
C
=
-0.5
A
V
CB
=
-10
V, I
E
=0, f=
1
MHz
V
V
MHz
pF
f
T
C
ob
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