RoHS
2SB740
2SB740
FEATURE
Power dissipation
P
CM
:
TRANSISTOR (PNP)
TO-92MOD
1. EMITTER
2. COLLECTOR
0.9
W (Tamb=25℃)
3. BASE
Collector current
I
CM:
-1
A
Collector-base voltage
V
(BR)CBO
:
-70
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃
to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Test
conditions
MIN
-70
-50
-6
-1
-0.2
100
320
-0.6
100
V
MHz
MAX
UNIT
V
V
V
µA
µA
Collector-emitter saturation voltage
Transition frequency
W
Output capacitance
CLASSIFICATION OF h
FE
Rank
Range
B
100-200
C
160-320
J
E
E
C
E
L
R
T
O
N
C
I
C
123
O
L
,
.
D
T
Ic= -10µA , I
E
=0
I
C
=-1mA , I
B
=0
I
E
= -10µA, I
C
=0
V
CB
= -55 V, I
E
=0
V
EB
= -6 V, I
C
=0
I
EBO
h
FE
V
CE
=-2 V, I
C
= -100mA
I
C
= -1A, I
B
=-100mA
V
CE
=-2V, I
C
= -10mA
V
CE
=-10V, I
E
=0, f=1 MHz
V
CEsat
f
T
C
ob
45
pF
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