RoHS
2SB892
2SB892
FEATURE
Power dissipation
P
CM
:
TRANSISTOR (PNP)
TO-92MOD
1. EMITTER
2. COLLECTOR
1
W (Tamb=25℃)
3. BASE
Collector current
I
CM
:
-2
A
Collector-base voltage
V
(BR)CBO
:
-60 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
unless otherwise specified)
Test
conditions
MIN
-60
-50
-6
-0.1
-0.1
100
40
-0.4
-1.2
150
V
V
MHz
560
MAX
UNIT
V
V
V
µA
µA
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
DC current gain
Collector-emitter saturation voltage
W
Base-emitter saturation voltage
Transition frequency
J
E
E
C
E
L
R
100-200
R
T
O
N
C
I
C
123
O
L
,
.
D
T
Ic= -10µA , I
E
=0
I
C
= -1mA , I
B
=0
I
E
=- 100µA, I
C
=0
V
CB
= -50V , I
E
=0
V
EB
= -4V ,
I
C
=0
I
EBO
H
FE(1)
H
FE(2)
V
CE
=-2V, I
C
= -100mA
V
CE
=-2V, I
C
= -1.5A
I
C
= -1A, I
B
= -50mA
I
C
= -1A, I
B
= -50mA
V
CE
= -10 V, I
C
= -50mA
V
CE(sat)
V
BE(sat)
f
T
CLASSIFICATION OF h
FE(1)
Rank
Range
S
140-280
T
200-400
U
280-560
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